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Direct current modulation of high power semiconductor lasers by high-frequency limit-cycle oscillations in gallium arsenide avalanche diodes
Russian version
Rozhkov A. V. 1, Rodin P. B. 1
1Ioffe Institute, St. Petersburg, Russia
Email: rozh@hv.ioffe.rssi.ru, rodin@mail.ioffe.ru
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High-frequency limit-cycle oscillations generated by reversely biased high-voltage diode operated in simplistic electrical circuit are applied for the direct current modulation of power semiconductor laser. Oscillation frequency is 2-2.4 GHz. The avalanche diode is connected by means of a strip line in-series with heterolaser equipped by tunnel-connected emitters and 50 Ω load. It has been observed that oscillations of the laser current and oscillations of the photodetector signal have the same frequency. The peak power of optical signal Pm at the maximum laser current ~ 2.0 A was Pm ~ 5.5 W for the half-width duration of the optical pulse ~ 180 ps. Keywords: direct current modulations, impact-ionization instabilities, avalanche diodes.
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