The bottom of a dimensional subband in a superlattice with strongly coupled shallow quantum wells
Pashkovskii A. B.1
1JSC "RPC "Istok" named after Shokin", Fryazino, Moscow oblast, Russia
Email: solidstate10@mail.ru
Based on the analytical solution of the dispersion equation, the energy position of the bottom of the dimensional subband in shallow superlattices is estimated. It is shown that for the upper valleys of GaAs/AlAs superlattices used in heterostructures of field-effect transistors, the depth of the bottom of the dimensional subband relative to the top of the barrier is at the level of 0.11-0.13 eV. Keywords: superlattice, dimensional subbands, potential barrier.
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