AC magnetoresistive effect in a device based on a silicon-on-insulator structure
Smolyakov D. A. 1, Rautskii M. V.1, Tarasov A. S. 1
1Kirensky Institute of Physics, Federal Research Center KSC SB, Russian Academy of Sciences, Krasnoyarsk, Russia
Email: sda88@iph.krasn.ru
The results of studies of the silicon on insulator (SOI) structure Fe/Si/SiO 2/p-Si and the simplest device based on it in the form of a dual Schottky diode are presented. The influence of an external magnetic field is detected. The obtained values of magnetoresistance MR on alternating current are up to 500% at a field of 1.5 T and up to 3500% in a field of 9 T. This effect is explained by the presence of impurity states at the dielectric/semiconductor interface and the process of their recharging. The energies of these states have been determined. Keywords: magnetoresistance, SOI-structures, Schottky-diode, magnetic field, impurity states.
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