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Electroluminescence of germanium-vacancy color centers in a diamond p--i--n diode
Lobaev M. A.
1, Radishev D. B.1, Vikharev A. L.1, Gorbachev A. M.1, Bogdanov S. A.
1, Isaev V. A.1, Kukushkin V. A.1, Kraev S. A.1, Okhapkin A. I.1, Arkhipova E. A.1, Demidov E. V.1, Drozdov M. N.1, Khaibullin R. I.
2
1Federal Research Center A.V. Gaponov-Grekhov Institute of Applied Physics of the Russian Academy of Sciences, Nizhny Novgorod, Russia
2Zavoisky Physical-Technical Institute, FRC Kazan Scientific Center of RAS, Kazan, Russia
2Zavoisky Physical-Technical Institute, FRC Kazan Scientific Center of RAS, Kazan, Russia
Email: lobaev@ipfran.ru, bogser@ipfran.ru, rikkfti@mail.ru
Electroluminescence of germanium-vacancy color centers (GeV centers) in a diamond p-i-n diode has been demonstrated for the first time. To create color centers, a layer implanted with germanium ions was created in the inner region of the diode. A narrow line at a wavelength of 602.9 nm was detected in the emission spectrum, corresponding to the emission of a germanium-vacancy color center in a negative charge state. Electroluminescence spectra of germanium-vacancy and silicon-vacancy color centers were compared. Keywords: CVD diamond, p-i-n diode, color centers, electroluminescence.
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