Postgrowth regime optimization of temperature and pressure reduction in HPHT-diamond crystal growth method
N.I. Alekseev1,2, Broyko A.P.1, Klepikov I.V.3, Koliaidin A.V.3, I.V. Oreshko1,2, Solomnikova A.V.1
1St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
3Almaz Scientific and Production Complex, Sestroretsk, Saint Petersburg, Russia
Email: NIAlekseyev@yandex.ru
Along with exceptional strength characteristics, typical of the diamond is significant brittleness. In particular, an appreciable fraction of diamonds grown using HPHT technology, crack when the rigid P-T conditions inherent to the crystal growth process are gradually reduced. The cause of cracking is excessive stresses associated with the deficiency of plastic properties of the diamond growth medium at certain stages of P-T reduction. A significant contribution to the crystal cracking probability can also be made by the insulating container which encorporates the growth medium and a part of the heating circuit. The paper considers the possibilities of minimizing the mechanical stress in the growth cell and, consequently, in the diamond by choosing the optimal trajectory of the pressure and temperature reduction. Keywords: high volume cubic press, diamond cracking, ductility of cast iron, ductility of solid catalyst.
- R.A. Khmel'nitskii, N.Kh. Talipov, G.V. Chucheva. Sinteticheskii almaz dlya elektroniki i optiki (IKAR, M., 2017) (in Russian) S. Shikata. Diamond \& Related Mater., 65, 168 (2016)
- N.I. Alekseev, V.V. Luchinin. Elektronika almaza (Izd-vo SPbGETU "LETI", SPb., 2020) (in Russian)
- S. Koizumi, H. Umezawa. J. Pernot, M. Suzuki (eds). Power Electronics Device Applications of Diamond Semiconductors (Woodhead Publishing Series in Electronic and Optical Materials, 2019)
- R. Li, M. Ding, T. Shi. J. Crystal Growth, 491, 111 (2018). DOI: 10.1016/j.jcrysgro.2017.12.021
- X. Liu, X. Jia, X. Guo, Z. Zhang, H. Ma. Crystal Growth \& Design, 10 (7), 2895 (2010). DOI: 10.1021/cg901168s
- X. Liu, X. Jia, C. Fang, H. Ma. Cryst. Eng. Comm., 18, 8506 (2016). DOI: 10.1039/c6ce02034h
- L.A. Gordienko, Yu.A. Detchuev, V.I. Zadneprovsky, S.V. Kolodieva, O.P. Komarov, V.A. Laptev, D.G. Malova, N.I. Petrova, L.N. Romanov, M.I. Samoilovich, N.G. Sanzharlinsky, V.I. Khadzhi, L.I. Tsinober, L.M. Shterenlikht. Sintez mineralov (Nedra, M., 1987), t. 1. (in Russian)
- Electronic source. Available at: https://ru.wikipedia.org/wiki/Pyrophyllite (description of physical properties)
- Q.G. Han, H.A. Ma, G.F. Huang. Rev. Sci. Instrum., 80, 043505 (2009)
- Qi-Gang Han, Q.C. mBan, P.W. Zhu. J. Cryst. Growth, 422, 29 (2015)
- Rui Li, B. Xu, Q. Zhang, X. Gu, G. Zheng, H. Ma, X. Jia. High Pressure Res., 36 (4), 575 (2016). DOI: 10.1080/08957959.1238915
- Y. Li, Y. Li, L. Chen, L. Guo, Z. Hea, L. Xia, G. Wang, P. Zhang. Y. No. J. Cryst. Growth, 515, 66 (2019). DOI: 10.1016/j.jcrysgro.2019.03.016
- G. Song, D. Ma, X. Zhou, L. Wang, Z. Wei, C. Xu, S. Wang. High Pressure Res., 41, 132 (2021)
- S. Eaton-Magana, J.E. Shigley, C.M. Breeding. Gems \& Gemology, 53 (3), 262 (2017). DOI: 10.5741/GEMS.53.3.262
- J.E. Shigley, S.F. McClure, C.M. Breeding, A. Hsi-tien Shen, S.M. Muhlmeister. G\&G, 40 (2), 128 (2004). DOI: dx.doi.org/10.5741/GEMS.40.2.128
- E.Yu.Tonkov. Fazovye diagrammy elementov pri vysokom davlenii (Nauka, M., 1979) (in Russian)
- V.R. Regel, A.I. Slutsker, E.E. Tomashevsky. UFN, 106 (2), 193 (1972) (in Russian). DOI: 10.3367/UFNr.0106.197202a.0193
- A.I. Slutsker. FTT, 46 (9), 1606 (2004). (in Russian)
- L.B. Potapova Mekhanika materialov pri slozhnom napryazhennom sostoyanii. Kak prognoziruyut predelnye napryazheniya-1, M., 2005) (in Russian)
- V.V. Prut. ZhTF, 78 (5), 138 (2008). (in Russian)
- Kh. Khan. Teoriya uprugosti: Osnovy lineinoi teorii i eyo primeneniya, per c nem. (Mir, M., 1988) (in Russian)
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