Technical Physics Letters
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Effect of temperature on the switching voltage of avalanche S-diodes
Prudaev I. A.
1, Kopyev V. V.
1, Oleinik V. L.
1, Skakunov M. S.
1, Sotnikova A. S.1,2, Guschin S. M.
2, Zemlyakov V. E.
3
1Tomsk State University, Tomsk, Russia
2Scientific and Research Institute of Semiconductors, Tomsk, Russia
3National Research University of Electronic Technology, Zelenograd, Moscow, Russia
2Scientific and Research Institute of Semiconductors, Tomsk, Russia
3National Research University of Electronic Technology, Zelenograd, Moscow, Russia
Email: funcelab@gmail.com, viktor.kopev@gmail.com, dozorx777@gmail.com, skakunovms@mail.ru, kurasova_as@niipp.ru, guschin_sm@niipp.ru, vzml@rambler.ru
The paper presents the results of an experimental study of the effect of temperature on the switching voltage of an avalanche S-diode made of GaAs with an iron impurity. It was found that an increase in temperature can lead to a decrease in the switching voltage at high switching frequencies (500 kHz). To analyze the effect, a simulation of double switching of an S-diode was carried out, and two different modes of its operation at a high pulse repetition rate were found. Keywords: Avalanche breakdown, deep centers, gallium arsenide, power electronics, pulse technology.
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