Solar-blind Schottky photodiodes based on the AlGaN:Si/AlN heterostructures grown by plasma-activated molecular beam epitaxy
Semenov A. N.1, Nechaev D. V.1, Burenina D. S.1, Smirnova I. P.1, Zadiranov Yu. M.1, Kulagina M. M. 1, Troshkov S. I.1, Shmidt N. M. 1, Lihachev A. I. 1, Kalinovskiy V. S. 1, Kontrosh E. V.1, Prudchenko K. K.1, Nahornii A. V. 2, Lutsenko E. V. 2, Jmerik V. N1
1Ioffe Institute, St. Petersburg, Russia
2B.I.Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk, Belarus
Email: semenov@beam.ioffe.ru
The article describes solar-blind Schottky photodiodes based on the AlN/Al0.7Ga0.3N/Al0.55Ga0.45N heterostructures grown by plasma-activated molecular beam epitaxy on c-sapphire substrates with various AlN buffer layers. Xray diffraction analysis and chemical surface etching were used to estimate the density of threading dislocations that affect leakage currents and spectral sensitivity of photodiodes. Optimization of the photodiode design and Ti/Al/Ti/Au contact layer made it possible to achieve photosensitivity of 51 mA/W in the solar-blind range (λ<290 nm) in the photovoltaic mode. Keywords: plasma-activated molecular beam epitaxy, solar-blind Schottky photodiodes, AlGaN, threading dislocations.
- W. Fang, Q. Li, J. Li, Y. Li, Q. Zhang, R. Chen, M. Wang, F. Yun, T. Wang, Crystals, 13 (6), 915 (2023). DOI: 10.3390/cryst13060915
- G. Namkoong, E. Trybus, K.K. Lee, M. Moseley, W.A. Doolittle, D.C. Look, Appl. Phys. Lett., 93 (17), 172112 (2008). DOI: 10.1063/1.3005640
- N. Biyikli, O. Aytur, I. Kimukin, T. Tut, E. Ozbay, Appl. Phys. Lett., 81 (17), 3272 (2002). DOI: 10.1063/1.1516856
- L. Gautam, J. Lee, G. Brown, M. Razeghi, IEEE J. Quantum Electron., 58 (3), 4000205 (2022). DOI: 10.1109/JQE.2022.3154475
- S. Pharkphoumy, V. Janardhanam, T.-H. Jang, K.-H. Shim, C.-J. Choi, Electronics, 12 (4), 1049 (2023). DOI: 10.3390/electronics12041049
- D.V. Nechaev, P.A. Aseev, V.N. Jmerik, P.N. Brunkov, Y.V. Kuznetsova, A.A. Sitnikova, V.V. Ratnikov, S.V. Ivanov, J. Cryst. Growth, 378, 319 (2013). DOI: 10.1016/j.jcrysgro.2012.12.080
- D.V. Nechaev, P.N. Brunkov, S.I. Troshkov, V.N. Jmerik, S.V. Ivanov, J. Cryst. Growth, 425, 9 (2015). DOI: 10.1016/j.jcrysgro.2015.03.055
- A.N. Semenov, D.V. Nechaev, D.S. Berezina, Yu.A. Guseva, M.M. Kulagina, I.P. Smirnova, Yu.M. Zadiranov, S.I. Troshkov, N.M. Shmidt, St. Petersburg Polytech. University J. Physics and Mathematic, 16 (1.3), 182 (2023). DOI: 10.18721/JPM.161.331
- D. Hull, D.J. Bacon, Introduction to dislocations, 5th ed. (Elsevier, 2011)
- T. Metzger, R. Hopler, E. Born, O. Ambacher, M. Stutzmann, R. Stommer, M. Schuster, H. Gobel, S. Christiansen, M. Albrecht, H.P. Strunk, Phil. Mag. A, 77 (4), 1013 (1998). DOI: 10.1080/01418619808221225
- M.W. Moseley, A.A. Allerman, M.H. Crawford, J.J. Wierer, M.L. Smith, A.M. Armstrong, J. Appl. Phys., 117 (9), 095301 (2015). DOI: 10.1063/1.4908543
- Z. Liliental-Weber, D. Zakharov, J. Jasinski, M.A. O'Keefe, H. Morkoc, Microsc. Microanal., 10 (1), 47 (2004). DOI: 10.1017/S1431927604040309
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