Features of the amplitude of random telegraph noise in the 2D MoS2-based MOSFET
Saparov Kh. Sh. 1
1Urganch State University, Urganch, Uzbekistan
Email: xushnudbeksaparov@gmail.com

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In this study there was constructed a model of the dependence of the random telegraphic noise (RTN) amplitude on the gate voltage and position of a single oxide trapped charge along the channel of MOSFET based on two-dimensional molybdenum disulfide. The RTN amplitude increases at gate voltages below the threshold one, and its dependence on the single charge position exhibits a maximum shifted from the channel center. This behavior of the RTN amplitude is explained, along with its dependence on the gate voltage, by its significant dependence on the drain voltage as well. Keywords: two dimensional molybdenum disulfide, random telegraph noise, MOSFET, single oxide trapped charge.
  1. D.J. Wardynski, End of Moore's law --- what's next for the future of computing [Electronic source]. https://www.brainspire.com/blog/end-of-moores-law-whats-next-for-the-future-of-computing (Published December 19, 2019)
  2. S.K. Moore, Spectrum, 56 (6), 9 (2019). DOI: 10.1109/MSPEC.2019.8727133
  3. Y. Yoon, K. Ganapathi, S. Salahuddin, Nano Lett., 11 (9), 3768 (2011). DOI: 10.1021/nl2018178
  4. H. Fang, S. Chuang, T.C. Chang, K. Takei, Nano Lett., 12 (7), 3788 (2012). DOI: 10.1021/nl301702r
  5. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, A. Kis, Nat. Nanotechnol., 6, 147 (2011). DOI: 10.1038/nnano.2010.279
  6. J. Kang, W. Liu, D. Sarkar, D. Jena, K. Banerjee, Phys. Rev. X, 4 (3), 031005 (2014). DOI: 10.1103/physrevx.4.031005
  7. J.P. Campbell, L.C. Yu, K.P. Cheung, J. Qin, J.S. Suehle, A. Oates, K. Sheng, in 2009 Proc. of the IEEE Int. Conf. on IC design and technology (IEEE, 2009), p. 17-20. DOI: 10.1109/ICICDT.2009.5166255
  8. Z. Geng, Simulation of graphen nanoribbon and MoS2 transistors, master thesis (Technical University Ilmenau, Ilmenau, 2016)
  9. A.E. Atamuratov, M.M. Khalilloev, A. Yusupov, A.J. Garci a-Loureiro, J.C. Chedjou, K. Kyandoghere, Appl. Sci., 10 (15), 5327 (2020). DOI: 10.3390/app10155327

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