Photodetectors with the long-wavelength cutoff of 2.4 μm based on metamorphic InGaAs/InP heterostructures grown by metal-organic vapor-phase epitaxy
Kalyuzhnyy N.A.
1, Kizhaev S.S.2, Mintairov S.A.1, Pivovarova A.A.1, Salii R.A.1, Chernjaev A.B.2,3
1Ioffe Institute, St. Petersburg, Russia
2Microsensor Technology, LLC, Saint-Petersburg, Russia
3Budyonny Military Academy of the Signal Corps, St. Petersburg, Russia
Email: Nickk@mail.ioffe.ru
The technique for growing metamorphic InGaAs buffer layers on InP substrates was used to create photodetectors with the long-wavelength cutoff of 2.4 μm. Optical and electrical characteristics of photodetectors based on the InGaAs/InP metamorphic heterostructure and those of devices based on the GaInAsSb/GaSb isoperiodic system were compared. Instrumental applicability of the developed technique is confirmed by high reverse-bias photosensitivity and resistance of the photodetectors. The dark current values correlate with low density of threading dislocations in the photodetector active region assessed by transmission electron microscopy. Keywords: photodetector, InGaAs/InP, metal-organic vapor-phase epitaxy, metamorphic layer, heterostructure.
- E.V. Kunitsyna, I.A. Andreev, G.G. Konovalov, A.A. Pivovarova, N.D. Ilinskaya, Yu.P. Yakovlev, Ya.Ya. Ponurovskii, A.I. Nadezhdinskii, A.S. Kuzmichev, D.B. Stavrovskii, M.V. Spiridonov, Semiconductors, 56 (5), 351 (2022). DOI: 10.21883/SC.2022.05.53432.9813
- A.N. Imenkov, B.E. Zhurtanov, A.P. Astakhova, K.V. Kalinina, M.P. Mikhailova, M.A. Sipovskaya, N.D. Stoyanov, Tech. Phys. Lett., 35 (1), 67 (2009). DOI: 10.1134/S1063785009010209
- Ch. Giesen, M. Heuken, F. Dimroth, A. Bett, T. Hannapel, Z. Kollonitsch, K. Moller, M. Seip, J. Koch, A. Greiling, AIP Conf. Proc., 738 (1), 267 (2004). DOI: 10.1063/1.1841903
- T. Burger, C. Sempere, B. Roy-Layinde, A. Lenert, Joule, 4 (8), 1660 (2020). DOI: 10 1016/j.joule.2020.06.021
- C.A. Wang, AIP Conf. Proc., 738 (1), 255 (2004). DOI: 10.1063/1.1841902
- www.hamamatsu.com [Electronic source]
- F. Dimroth, W. Guter, J. Schone, E. Welser, M. Steiner, E. Oliva, A. Wekkeli, G. Siefer, S.P. Philips, A.W. Bett, in 2009 34th IEEE Photovoltaic Specialists Conf. (PVSC) (IEEE, 2009), p. 001038. DOI: 10.1109/pvsc.2009.5411199
- T. Takamoto, H. Washio, H. Juso, in 2014 IEEE 40th Photovoltaic Specialist Conf. (PVSC) (IEEE, 2014), p. 0001. DOI: 10.1109/PVSC.2014.6924936
- J.F. Geisz, R.M. France, K.L. Schulte, M.A. Steiner, A.G. Norman, H.L. Guthrey, M.R. Young, T. Song, T. Moriarty, Nat. Energy, 5, 326 (2020). DOI: 10.1038/s41560-020-0598-5
- S.A. Mintairov, V.M. Emelyanov, D.V. Rybalchenko, R.A. Salii, N.K. Timoshina, M.Z. Shvarts, N.A. Kalyuzhnyy, Semiconductors, 50 (4), 517 (2016). DOI: 10.1134/S1063782616040163
- N.A. Kalyuzhnyy, S.A. Mintairov, A.M. Nadtochiy, V.N. Nevedomskiy, D.V. Rybalchenko, M.Z. Shvarts, Electron. Lett., 53 (3), 173 (2017). DOI: 10.1049/el.2016.4308
- N.A. Kalyuzhnyy, V.M. Emelyanov, S.A. Mintairov, M.V. Nahimovich, R.A. Salii, M.Z. Shvarts, AIP Conf. Proc., 2298 (1), 030001 (2020). DOI: 10.1063/5.0032903
- N.A. Kalyuzhnyy, V.M. Emelyanov, V.V. Evstropov, S.A. Mintairov, M.A. Mintairov, M.V. Nahimovich, R.A. Salii, M.Z. Shvarts, Solar Energy Mater. Solar Cells, 217, 110710 (2020). DOI: 10.1016/j.solmat.2020.110710
- E.I. Vasilkova, E.V. Pirogov, M.S. Sobolev, E.V. Ubyivovk, A.M. Mizerov, P.V. Seredin, Kondensirovannye sredy i mezhfaznye granitsy, 25 (1), 20 (2023). DOI: 10.17308/kemf.2023.25/10972 (in Russian)
- K.L. Schulte, D.J. Freidman, T. Dada, H.L. Guthrey, E.W. Costa, E.J. Tervo, R.M. France, J.F. Geisz, M.A. Steiner, Adv. Energy Mater., 14 (10), 2303367 (2024). DOI: 10.1002/aenm.202303367
- D.C. Houghton, D.D. Perovic, J.-M. Baribeau, G.C. Weatherly, J. Appl. Phys., 67 (4), 1850 (1990). DOI: 10.1063/1.345613
- www.lmnst.com [Electronic source]
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.
