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Study of electrical resistance of gallium films on reconstructed Si(111) surface
Russian version
Tsukanov D. A. 1,2, Ryzhkova M. V. 1
1Institute of Automation and Control Processes, Far East Branch, Russian Academy of Sciences, Vladivostok, Russia
2Far Eastern Federal University, Vladivostok, Russia
Email: tsukanov@iacp.dvo.ru, ryzhkova@iacp.dvo.ru
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The results of a study of the crystal structure and electrical resistance of Si(111) silicon substrates after gallium deposition onto preformed surface reconstructions in the Ga/Si(111), Tl/Si(111), Au/Si(111) systems are presented. The work used the low-energy electron diffraction method to study changes in the structure of the surface crystal lattice, as well as a four-point probe method to measure the electrical resistance of substrates under in situ conditions. The influence of the concentration of adsorbed gallium atoms on the structural and electrical properties of films is considered. The role of surface reconstructions as a buffer layer for the subsequent growth of ultrathin films is demonstrated. Keywords: adsorption, surface reconstruction, surface conductivity, low-energy electron diffraction, four-point probe method for measuring substrate resistance.
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