Technical Physics Letters
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- 2023
- 2022
Injection-enhanced annealing kinetics of GaAs-based gamma-irradiated homo- and heterostructures
Nosovets V. S.
1, Tkachev O. V.1, Dubrovskikh S. M.1, Pustovarov V. A.
2
1All-Russia Research Institute of Technical Physics, Russian Federal Nuclear Center, Snezhinsk, Chelyabinsk oblast, Russia
2Ural Federal University after the first President of Russia B.N. Yeltsin, Yekaterinburg, Russia
2Ural Federal University after the first President of Russia B.N. Yeltsin, Yekaterinburg, Russia
Email: vadim.vx@yandex.ru, v.a.pustovarov@urfu.ru
The injection-enhanced annealing kinetics of radiation-induced defects has been studied by electroluminescence intensity measurements for quantum-sized GaAs/AlGaAs heterostructures irradiated with 60Co gamma-quanta. The comparison of the obtained results with the available literature data for GaAs homostructures has revealed that in transition from homostructures to heterostructures the current density, needed for radiation-induced defects annealing, decreases by 2-4 orders and a different mechanism of defect annihilation comes out. The results indicate higher injection-enhanced annealing efficiency in devices containing quantum-sized heterostructures. Keywords: injection-enhanced annealing, recombination-enhanced annealing, radiation resistance, radiation-induced defects.
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