Kalinovskii V. S.1, Maleev N. A.1, Kontrosh E. V.1, Vasil`ev A. P.2, Prudchenko K K.1, Tolkachev I. A.1, Malevskaya A. V.1, Ustinov V. M.1,2
1Ioffe Institute, St. Petersburg, Russia
2Submicron Heterostructures for Microelectronics, Research & Engineering Center, RAS, Saint-Petersburg, Russia
Email: vitak.sopt@mail.ioffe.ru
Based on mathematical modeling, there has been proposed a new type of thermally stable connecting tunnel diode with an intermediate i-layer, which is promising for implementing highly efficient multijunction laser photoconverters. Two types of the n++-GaAs/p++-Al0.4Ga0.6As tunnel diode structures have been grown by molecular beam epitaxy: with and withput the intermediate i-GaAs layer. It has been experimentally demonstrated that the inclusion of a nanoscale i-layer between the n++- and p++-regions of the tunnel diode provides an increase in the density of peak tunneling current Jp. Due to the epitaxial wafer annealing which simulates a long-term process of epitaxial growth of multijunction laser-radiation photoconverters, the structure with the i-layer exhibited a 30-% increase in peak tunneling current Jp. Keywords: mathematical modeling, connecting tunnel diode, i-layer, molecular beam epitaxy, multijunction laser photoconverter.
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