On a successful experience of homoepitaxy of β-Ga2O3 layers on native substrates
Bauman D. A.1, Panov D. Iu.1, Spiridonov V. A.1, Ivanov A. I.1, Sakharov A. V.2, Rodin S. N.2, Prasolov N. D.2, Romanov A. E.1,2
1ITMO University, St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia

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The paper proposes a method for producing substrates from bulk crystals of the β-Ga2O3 gallium oxide by cleaving. With an example of growing the β-Ga2O3 and β-(AlxGa1-x)2O3 layers on the fabricated substrates by epitaxy from metal-organic compounds, the possibility of using these substrates for homoepitaxy is shown. An analysis of the surface morphology and structural quality of the obtained layers has been carried out. Keyword: gallium oxide, substrates, metal-organic vapor phase epitaxy, homoepitaxy.
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