Almaev D. A.1, Almaev A. V.1,2, Nikolaev V. I.3,4, Butenko P. N.1,3, Scheglov M. P.3, Chikiryaka A. V.3, Pechnikov A. I.3
1Tomsk State University, Tomsk, Russia
2Fokon LLC, Kaluga, Russia
3Ioffe Institute, St. Petersburg, Russia
4Perfect Crystals LLC, Saint-Petersburg, Russia
Email: almaev001@mail.ru
The photoelectrical characteristics of the In2O3-Ga2O3 mixed compounds films grown by halide vapor-phase epitaxy on sapphire substrates were studied. The studied films were a mixture of cubic δ-Ga2O3 and c-In2O3 phases. The obtained results for In2O3-Ga2O3 mixed compounds, ε(kappa)-Ga2O3 and c-In2O3 films grown at similar conditions were compared. The In2O3-Ga2O3 mixed compounds films demonstrated the highest photosensitivity, operation rate and a low base resistance. The quantum efficiency was 6.9· 103% at an electric-field strength of 1 kV/cm, which was significantly higher than in the known literature. It is assumed, that the high photosensitivity was caused by the generation of charge carriers in the δ-Ga2O3 regions formed between c-In2O3 with a high electron concentration. Keywords: Gallium oxide, indium oxide, UV photodetector, halide vapor phase epitaxy, photoelectrical characteristics.
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