Technical Physics Letters
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Optical studies of InP/InAsP/InP nanoinclusions integrated into silicon
Melnichenko I. A.
1,2, Komarov S. D.
1, Dragunova A. S.
1, Karaborchev A. A.
1, Moiseev E. I.
1, Kryzhanovskaya N.V.
1, Makhov I. S.
1, Zhukov A. E.
1
1HSE University, St. Petersburg, Russia
2Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
2Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
Email: imelnichenko@hse.ru, skomarov@hse.ru, adragunova@hse.ru, alex_karaborchev@mail.ru, emoiseev@hse.ru, nkryzhanovskaya@hse.ru, imahov@hse.ru, aezhukov@hse.ru
Submicron InAsxP1-x/InP nanoinclusions formed by selective epitaxial growth in silicon using metal & - organic vapor epitaxy and a molten drop of a group III element have been studied using confocal optical microscopy and microphotoluminescence spectroscopy. The influence of the distance between nanoinclusions on the photoluminescence intensity was investigated, and the temperature dependences of photoluminescence in the range of 77-290 K were obtained. Emission in the spectral range of 1.2 μm was obtained at room temperature. Keywords: A3B5 nanoinclusions, InAsP integration on silicon, InAsP/InP.
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