Technical Physics Letters
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- 2022
Field-effect transistor with graphene channel and epitaxial calcium fluoride layer as a gate dielectric
Illarionov Yu. Yu.1,2, Banshchikov A. G.1, Knobloch T.2, Ivanov I. A.1, Grasser T.2, Sokolov N. S.1, Vexler M. I.
1
1Ioffe Institute, St. Petersburg, Russia
2Institute of Microelectronics, Vienna University of Technology, Vienna, Austria
2Institute of Microelectronics, Vienna University of Technology, Vienna, Austria
Email: vexler@mail.ioffe.ru
The samples of field-effect transistors for two-dimensional electronics using a combination of graphene (as a channel material) and epitaxial calcium fluoride (as a gate-insulating material), have been fabricated for the first time. Conventional measurements of terminal currents in these devices confirmed their functionality. The study can be treated as a step toward creation of the scalable transistors with the new promising materials. One of the nearest challenges is reduction of the sample-to-sample spread of the characteristics. Keywords: 2D electronics, field-effect transistor, graphene, calcium fluoride.
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