Solid-phase substitution processes with phosphorus in InAs and InSb
Gagis G. S. 1, Kuchinskii V. I.1, Kozlov R. Yu.2,3, Kazantsev D. Yu. 1, Ber B. Ya. 1, Tokarev M. V.1, Vlasov A. S.1, Vasil’ev V. I. 1
1Ioffe Institute, St. Petersburg, Russia
2Federal State Research and Development Institute of Rare Metal Industry (Giredmet JSC), Moscow, Russia
3National University of Science and Technology MISiS, Moscow, Russia
Email: galina-gagis@yandex.ru, dukazantsev@mail.ioffe.ru, boris.ber@mail.ioffe.ru, mishatokarev@mail.ru

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The processes of solid-phase substitution of atoms of the fifth group for phosphorus atoms in InAs semiconductor wafers at temperatures of 580-590oC and in InSb at 440-460oC using solutions of the Sn-ZnGeP2 and Sn-CdGeP2 melts as vapor sources have been studied. The formation of InPxSb1-x solid solution in InSb was confirmed by the Raman light scattering method. Keywords: solid-phase substitution reactions, p-n-junction, doping, narrow-bandgap semiconductors.
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