Venevtsev I. D.1, Muslimov A. E.2
1Peter the Great Saint-Petersburg Polytechnic University, St. Petersburg, Russia
2Federal Research Center "Crystallography and Photonics", Russian Academy of Sciences, Moscow, Russia
Email: venevtsev.ivan@gmail.com, amuslimov@mail.ru
For the first time, the work presents a thin-film X-ray scintillator based on ZnO with a thickness of more than 100 μm with luminescence decay kinetics of the order of 1.1 ns (including the width of the excitation pulse). The absorption edge of the film scintillator is shown to be located in the region of 388 nm. The total transmittance of the sample in the visible and near infrared region reaches 40%. The X-ray excited luminescence spectrum is represented by two intense bands: a narrow band of excitonic nature with a maximum in the region of 389 nm and a wide band of green luminescence related to intrinsic defects. Keywords: ZnO, thick films, X-ray luminescence. DOI: 10.61011/TPL.2023.09.56704.19641
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Дата начала обработки статистических данных - 27 января 2016 г.