Growth kinetics of III-V nanomembranes influenced by the re-emitted flux of group III species
Dubrovskii V. G. 1
1St. Petersburg State University, St. Petersburg, Russia
Email: dubrovskii@mail.ioffe.ru

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A growth equation for III-V nanomembranes (NMs) fabricated on patterned substrates with one-dimensional array of trenches is derived considering the re-emitted flux of group V species. It is shown that the NM height increases with the pitch of trenches and for narrower trenches. Overall, the growth kinetics and the resulting morphology of III-V NMs on reflecting substrates is very different from those on adsorbing substrates, which should be carefully accounted for in the growth experiments. Keywords: III-V compound semiconductors, nanomembranes, re-emitted flux, growth rate, modeling. DOI: 10.61011/TPL.2023.07.56439.19590
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