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Synthesis of thin single-crystalline α-Cr₂O₃ layers on sapphire substrates by ultrasonic-assisted chemical vapor deposition

Russian version

DOI: 10.21883/TPL.2023.05.56036.19549

Nikolaev V. I.¹, Timashov R.B.¹, Stepanov A. I.¹, Stepanov S. I.², Chikiryaka A. V.¹, Shcheglov M. P.¹, Polyakov A. Y.³

¹Ioffe Institute, St. Petersburg, Russia
²Perfect Crystals LLC, Saint-Petersburg, Russia
³National University of Science and Technology MISiS, Moscow, Russia

Email: chikiryaka@mail.ru

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Abstract
References
Статистика просмотров

Single-crystalline α-Cr₂O₃ layers were synthesized on a sapphire substrate with a basal orientation in a laboratory reactor using ultrasonic-assisted chemical vapor deposition in the temperature range of 700-850^oC. The influence of the growth temperature on the structural quality of the layer was studied by X-ray diffraction. At a growth temperature of 800^oC, continuous layers with a thickness of about 1 μm were obtained. The layers were transparent in the visible region with a slightly greenish tint and showed some light transmission up to wavelengths of ~ 350 nm. The full width at half maximum of the rocking curve for reflection 0006 was ~ 300 arcsec. Keywords: chromium oxide, CVD epitaxy, wide-bandgap semiconductor.

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