Technical Physics Letters
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Synthesis of thin single-crystalline α-Cr2O3 layers on sapphire substrates by ultrasonic-assisted chemical vapor deposition
Nikolaev V. I.1, Timashov R.B.1, Stepanov A. I.1, Stepanov S. I.2, Chikiryaka A. V.1, Shcheglov M. P.1, Polyakov A. Y.3
1Ioffe Institute, St. Petersburg, Russia
2Perfect Crystals LLC, Saint-Petersburg, Russia
3National University of Science and Technology MISiS, Moscow, Russia
2Perfect Crystals LLC, Saint-Petersburg, Russia
3National University of Science and Technology MISiS, Moscow, Russia
Email: chikiryaka@mail.ru
Single-crystalline α-Cr2O3 layers were synthesized on a sapphire substrate with a basal orientation in a laboratory reactor using ultrasonic-assisted chemical vapor deposition in the temperature range of 700-850oC. The influence of the growth temperature on the structural quality of the layer was studied by X-ray diffraction. At a growth temperature of 800oC, continuous layers with a thickness of about 1 μm were obtained. The layers were transparent in the visible region with a slightly greenish tint and showed some light transmission up to wavelengths of ~ 350 nm. The full width at half maximum of the rocking curve for reflection 0006 was ~ 300 arcsec. Keywords: chromium oxide, CVD epitaxy, wide-bandgap semiconductor.
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