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InGaAlAs/InAlAs heterostructures for electro-absorption modulator
Gulyaev D. V.
1, Kolosovsky D. A.
1, Dmitriev D. V.
1, Gutakovskii A. K.
1, Kolosovsky E. A.
1, Zhuravlev K. S.
1
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Email: gulyaev@isp.nsc.ru, d.kolosovsky@isp.nsc.ru, ddmitriev@isp.nsc.ru, gut@isp.nsc.ru, kolos@isp.nsc.ru, zhur@isp.nsc.ru
The structural and optical characteristics of heterostructures with InGaAlAs/InAlAs quantum wells, in which a quaternary alloy is obtained by alternating monolayer growth of InAlAs and InGaAs layers by molecular beam epitaxy, have been investigated. It has been shown that obtained heterostructures are promising for creation of electro-absorption modulators designed for a wavelength of 1.55 μm with the extinction coefficient of more than 20 dB at a voltage of less than 4 V. Keywords: Electro-absorption modulator, molecular beam epitaxy, quantum wells, Stark effect.
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