3.8 THz quantum cascade laser grown by metalorganic vapor phase epitaxy
Bagaev T. A. 1, Ladugin M. A. 1, Marmalyuk A. A. 1, Danilov A. I. 1, Ushakov D. V. 2, Afonenko A. A. 2, Zaytsev A. A. 3, Maremyanin K. V. 4, Morozov S. V. 4, Gavrilenko V. I. 4,5, Galiev R. R. 6, Pavlov A. Yu. 6, Pushkarev S. S. 6, Ponomarev D. S. 6, Khabibullin R. A. 5,6
1“Polyus” Research Institute of M.F. Stelmakh Joint Stock Company, Moscow, Russia
2Belarusian State University, Minsk, Republic of Belarus
3National Research University of Electronic Technology, Zelenograd, Moscow, Russia
4Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
5Ioffe Institute, St. Petersburg, Russia
6 Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow, Russia
Email: ushakovdv@bsu.by, afonenko@bsu.by, Ziko27@yandex.ru, khabibullin@isvch.ru, s_s_e_r_p@mail.ru

PDF
We have demonstrated a quantum cascade laser (QCL) with a generation frequency of about 3.8 THz, grown by metal-organic vapor phase epitaxy. The multilayer heterostructure for QCLs consists of 185 repetitions of an active module containing four GaAs/Al0.15Ga0.85As quantum wells. The threshold current and threshold voltage of the fabricated QCL were 2.25 kA/cm2 and 19.7 V, respectively. The QCL oscillations were carried out in the multimode regime, and the detection of terahertz radiation continued with an increase in the laser temperature up to 60 K. Keywords: quantum cascade lasers, terahertz, metalorganic vapor phase epitaxy, quantum well, QCL, MOCVD, MOVPE.
  1. A.E. Yachmenev, S.S. Pushkarev, R.R. Reznik, R.A. Khabibullin, D.S. Ponomarev, Prog. Cryst. Growth Charact. Mater., 66, 100485 (2020). DOI: 10.1016/j.pcrysgrow.2020.100485
  2. D.V. Ushakov, A.A. Afonenko, A.A. Dubinov, V.I. Gavrilenko, I.S. Vasil'evskii, N.V. Shchavruk, D.S. Ponomarev, R.A. Khabibullin, Quantum Electron., 48 (11), 1005 (2018). DOI: 10.1070/QEL16806
  3. M.S. Vitiello, A. Tredicucci, Adv. Phys. X, 6, 1893809 (2021). DOI: 10.1080/23746149.2021.1893809
  4. B. Wen, D. Ban, Prog. Quantum Electron., 80, 100363 (2021). DOI: 10.1016/j.pquantelec.2021.100363
  5. L.H. Li, J.X. Zhu, L. Chen, A.G. Davies, E.H. Linfield, Opt. Express, 23, 2720 (2015). DOI: 10.1364/OE.23.002720
  6. L. Sirigu, A. Rudra, E. Kapon, M.I. Amanti, G. Scalari, J. Faist, Appl. Phys. Lett., 92, 181111 (2008). DOI: 10.1063/1.2924294
  7. M.I. Amanti, G. Scalari, R. Terazzi, M. Fischer, M. Beck, J. Faist, A. Rudra, P. Gallo, E. Kapon, New J. Phys., 11, 125022 (2009). DOI: 10.1088/1367-2630/11/12/125022
  8. K. Fujita, M. Yamanishi, S. Furuta, K. Tanaka, T. Edamura, T. Kubis, G. Klimeck, Opt. Express, 20, 20647 (2012). DOI: 10.1364/OE.20.020647
  9. M.A. Ladugin, I.V. Yarotskaya, T.A. Bagaev, K.Yu. Telegin, A.Yu. Andreev, I.I. Zasavitskii, A.A. Padalitsa, A.A. Marmalyuk, Crystals, 9, 305 (2019). DOI: 10.3390/cryst9060305
  10. R.A. Khabibullin, N.V. Shchavruk, D.S. Ponomarev, D.V. Ushakov, A.A. Afonenko, I.S. Vasil'evskii, A.A. Zaycev, A.I. Danilov, O.Yu. Volkov, V.V. Pavlovskiy, K.V. Maremyanin, V.I. Gavrilenko, Semiconductors, 52 (11), 1380 (2018). DOI: 10.1134/S1063782618110118
  11. R.A. Khabibullin, N.V. Shchavruk, D.S. Ponomarev, D.V. Ushakov, A.A. Afonenko, K.V. Maremyanin, O.Yu. Volkov, V.V. Pavlovskiy, A.A. Dubinov, Opto-Electron. Rev., 27, 329 (2019). DOI: 10.1016/j.opelre.2019.11.002
  12. A.V. Ikonnikov, K.V. Marem'yanin, S.V. Morozov, V.I. Gavrilenko, A.Yu. Pavlov, N.V. Shchavruk, R.A. Khabibullin, R.R. Reznik, G.E. Cirlin, F.I. Zubov, A.E. Zhukov, Zh.I. Alferov, Tech. Phys. Lett., 43 (4), 362 (2017). DOI: 10.1134/S1063785017040083.

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru