Technical Physics Letters
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Hydrogen Influence on Electrical and Photoelectrical Properties of InP/Pd Thin-film Structures obtained by Sol-Gel Method
Grebenshchikova E. A.1, Shutaev V. A.1, Matveev V. A.2, Gubanova N. N.2,3, Shilova O. A.3,4, Yakovlev Yu. P.1
1Ioffe Institute, St. Petersburg, Russia
2Konstantinov Petersburg Nuclear Physics Institute, National Research Center Kurchatov Institute, Gatchina, Russia
3Grebenschikov Institute of Silicate Chemistry RAS, Saint-Petersburg, Russia
4St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
2Konstantinov Petersburg Nuclear Physics Institute, National Research Center Kurchatov Institute, Gatchina, Russia
3Grebenschikov Institute of Silicate Chemistry RAS, Saint-Petersburg, Russia
4St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
Email: lot160@mail.ru, vadimshutaev@mail.ru, matveev_va@pnpi.nrcki.ru, gubanova_nn@pnpi.nrcki.ru, olgashilova@bk.ru, Yakovlev@iropto.ioffe.ru
The current-voltage characteristics and photoelectric properties of semiconductor structures containing Pd nanoparticles in thin films synthesized by the sol-gel method on an n-InP substrate have been investigated. The experimental results show that in presence of hydrogen the cut-off voltage changes. The photovoltage and photocurrent upon illumination of the structure with an LED (λ=0.9 μm) and pulsed exposure to hydrogen change, that was observed earlier for hydrogen-sensitive Pd/n-InP Schottky diodes. The prospects of using the structures under study as a sensitive element for hydrogen sensor are discussed. Keywords: Pd nanoparticles, sol-gel method, hydrogen, Schottky diode, hydrogen sensor.
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