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Home » Technical Physics Letters » Year 2022, issue 13 » Article p. 26
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Increasing the efficiency of triple-junction solar cells due to the metamorphic InGaAs subcell
Russian version
DOI: 10.21883/TPL.2022.13.53388.18888
Mintairov M. A.1, Evstropov V. V.1, Mintairov S. A.1, Nakhimovich M. V.1, Salii R.A.1, Shvarts M.Z.1, Kalyuzhnyy N. A.1
1Ioffe Institute, St. Petersburg, Russia
Email: mamint@mail.ioffe.ru
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The efficiency of GaInP/GaAs/InxGa1-xAs triple-junction solar cells obtained by replacing (in the widely used "classical" GaInP / GaAs / Ge heterostructure) the lower germanium with InxGa1-xAs subcell formed using the metamorphic growth technology has been investigated. Based on an original approach, the optimal indium concentration in the narrow-gap subcell has been found. The main parameters of InxGa1-xAs subcells with an indium concentration from x=0.11 to 0.36 were determined and were used to calculate the IV characteristics of GaInP/GaAs/InxGa1-xAs solar cells. It has been determined that at x=0.28 the efficiency of the triple-junction solar cell increases by 3.4% (abs) in comparison with the "classical" solar cell, reaching a value of 40.3% (AM1.5D). Also it has been shown that the efficiency of such solar cells can be increased up to 41%. Keywords: Multi-junction solar cells, photoconverters, metamorphic buffer. M.Z.Shvarts,
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