Technical Physics Letters
To authors
Increasing the efficiency of triple-junction solar cells due to the metamorphic InGaAs subcell
Mintairov M. A.1, Evstropov V. V.1, Mintairov S. A.1, Nakhimovich M. V.1, Salii R.A.1, Shvarts M.Z.1, Kalyuzhnyy N. A.1
1Ioffe Institute, St. Petersburg, Russia
Email: mamint@mail.ioffe.ru
The efficiency of GaInP/GaAs/InxGa1-xAs triple-junction solar cells obtained by replacing (in the widely used "classical" GaInP / GaAs / Ge heterostructure) the lower germanium with InxGa1-xAs subcell formed using the metamorphic growth technology has been investigated. Based on an original approach, the optimal indium concentration in the narrow-gap subcell has been found. The main parameters of InxGa1-xAs subcells with an indium concentration from x=0.11 to 0.36 were determined and were used to calculate the IV characteristics of GaInP/GaAs/InxGa1-xAs solar cells. It has been determined that at x=0.28 the efficiency of the triple-junction solar cell increases by 3.4% (abs) in comparison with the "classical" solar cell, reaching a value of 40.3% (AM1.5D). Also it has been shown that the efficiency of such solar cells can be increased up to 41%. Keywords: Multi-junction solar cells, photoconverters, metamorphic buffer. M.Z.Shvarts,
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