Technical Physics Letters
To authors
Volumes and Issues
- 2024
- 2023
- 2022
Heat sink efficiency investigation of silicon-on-diamond composite substrates for gallium nitride-based devices
Ezubchenko I. S.
1, Chernykh M. Y.
1, Chernykh I. A.
1, Andreev A. A.1, Mayboroda I. O.
1, Kolobkova E. M.
1, Khrapovitskaya Yu. V.1, Grishchenko J. V.
1, Perminov P. A.1, Zanaveskin M. L.
1
1National Research Center “Kurchatov Institute”, Moscow, Russia
Email: ezivan9@gmail.com, garaeva-maria@yandex.ru, igor.chernykh@gmail.com, alan.andreev@gmail.com, mrlbr@mail.ru, kolobkovaevg@gmail.com, khrapovitskaya.julia@mail.ru, grishchenko.jv@gmail.com, pavlikap@mail.ru, zanaveskin.maxim@gmail.com
In this work, thermometric measurements of gallium nitride-based ungated transistors on silicon-on-diamond composite substrates are performed. Their heat sink efficiency is compared with transistors made by standard technology on a silicon carbide substrates. Reducing of the surface temperature by more than 50oC using new type of silicon-on-diamond composite substrates at dissipation power above 7 W is shown. The proposed approach is promising for increasing the output power and reliability of gallium nitride-based devices. Keywords: gallium nitride, heat sink, diamond, dissipation power.
- P. Fay, D. Jena, P. Maki, High-frequency GaN electronic devices (Springer, Cham, 2020), p. 1-40. DOI: 10.1007/978-3-030-20208-8
- MACOM --- RF Power Amplifier --- GaN [Electronic source]. URL: https://www.macom.com/products/rf-power-amplifiers- 5w/rf-power-amplifier---gan (date of access 15.10.2021)
- A.V. Inyushkin, A.N. Taldenkov, V.G. Ralchenko, A.P. Bolshakov, A.V. Koliadin, A.N. Katrusha, Phys. Rev. B, 97 (14), 144305 (2018). DOI: 10.1103/PhysRevB.97.144305
- S. Hiza, M. Fujikawa, Y. Takiguchi, K. Nishimura, E. Yagyu, T. Matsumae, Y. Kurashima, H. Takagi, M. Yamamuka, in 2019 Int. Conf. on solid state devices and materials (Nagoya University, Japan, 2019), p. 467. DOI: 10.7567/SSDM.2019.K-4-04
- Y. Minoura, T. Ohki, N. Okamoto, A. Yamada, K. Makiyama, J. Kotani, S. Ozaki, M. Sato, N. Nakamura, Jpn. J. Appl. Phys., 59 (SG), SGGD03 (2020). DOI: 10.7567/1347-4065/ab5b68
- Y. Zhou, R. Ramaneti, J. Anaya, S. Korneychuk, J. Derluyn, H. Sun, J. Pomeroy, J. Verbeeck, K. Haenen, M. Kuball, Appl. Phys. Lett., 111 (4), 041901 (2017). DOI: 10.1063/1.4995407
- M.Y. Chernykh, I.S. Ezubchenko, I.O. Mayboroda, I.A. Chernykh, E.M. Kolobkova, P.A. Perminov, V.S. Sedov, A.S. Altakhov, A.A. Andreev, J.V. Grishchenko, A.K. Martyanov, V.I. Konov, M.L. Zanaveskin, Nanotechnol. Russ., 15, 793 (2020). DOI: 10.1134/S1992722320060072
- I.O. Maiboroda, I.A. Chernykh, V.S. Sedov, A.S. Altakhov, A.A. Andreev, Yu.V. Grishchenko, E.M. Kolobkova, A.K. Mart'yanov, V.I. Konov, M.L. Zanaveskin, Tech. Phys. Lett. (2021). DOI: 10.1134/S1063785021040118
- S. Lee, R. Vetury, J.D. Brown, S.R. Gibb, W.Z. Cai, J. Sun, D.S. Green, J. Shealy, in 2008 IEEE Int. Reliability Physics Symp. (Phoenix, USA, 2008), p. 446. DOI: 10.1109/RELPHY.2008.4558926
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.