Technical Physics Letters
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Terahertz generation in InAs epitaxial films
Trukhin V. N.
1, Solov'ev V. A.
1, Mustafin I. A.
1, Chernov M. Yu.
1
1Ioffe Institute, St. Petersburg, Russia
Email: valera.truchin@mail.ioffe.ru, vasol.beam@mail.ioffe.ru, man-st@mail.ru, chernov.spbau@gmail.com
We present the results of terahertz generation studies under excitation via femtosecond lasers pulses epitaxial films of InAs, which were synthesized on semi-insulating and highly doped GaAs substrates. It is shown that a terahertz emitter based on epitaxial InAs film grown on a heavily doped GaAs n-type substrate, has the same terahertz generation efficiency as the InAs-film emitter grown on a semi-isolating GaAs substrate, but it has a significantly better spectral resolution, which is mainly determined by the parameters of the optical delay line and the femtosecond laser's stability. Keywords: coherent terahertz emitter, InAs epitaxial film, molecular beam epitaxy
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