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- 2022
Post-growth technology of multi-junction photovoltaic converters based on A3B5 heterostructures
Malevskaya A. V.
1, Il'inskaya N. D.
1, Zadiranov Y. M.
1, Blokhin A. A.1, Malevskii D. A.
1, Pokrovskii P. V.
1
1Ioffe Institute, St. Petersburg, Russia
Email: amalevskaya@mail.ioffe.ru, Natalia.Ilynskaya@mail.ioffe.ru, zadiranov@mail.ioffe.ru, bloalex@yandex.ru, dmalevsky@scell.ioffe.ru, P.Pokrovskiy@mail.ioffe.ru
Investigation and development of the post-growth technology for fabricating multi-junction photovoltaic converters based on GaInP/GaInAs/Ge heterostructure has been carried out. Antireflection coating, ohmic contacts and mesa-structure forming stages have been reviewed. The technology of n+-GaAs contact layer etching with the help of plasma-chemical, liquid and ion-beam etching has been investigated. Antireflection coefficient of radiation from the heterostructure with TiOx/SiO2 (x close to 2) antireflection coating surface was less then 3% in wavelength range 450-850 nm. The value of contact resistance for n- and p-type conductivity was 3·10-5-3·10-6 Ωcm2, the decrease of photosensitive region shading degree at increased bus-bar conductivity has been archived. The mesa-structure surface current leakage decreased to the value of 10-9 A at voltage less then 1 V. Keywords: photovoltaic converters, ohmic contacts, antireflection coating, mesa-structure
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