Volumes and Issues
Home » Technical Physics » Year 2026, issue 5 » Article p. 824
<<<>>>
Influence of an alternating electric field on the few-cycle pulses dynamics in a polymer composite with carbon nanotubes
Russian version
Yanyushkina N. N.1
1Volgograd State University, Volgograd, Russia
Email: yana_nn@volsu.ru
PDF
This paper presents a study of the dynamics of few-cycle optical pulses in a polymer-carbon nanotube composite medium exposed to an external alternating electric field. Numerical simulation of pulse evolution is performed using a modified nonlinear wave equation that takes into account the contributions of both the polymer matrix and the nanotubes to the electric current density. It is established that an external alternating field is an effective tool for controlling the amplitude, shape, and propagation velocity of pulses. The dependence of pulse dynamics on the amplitude and frequency of the external field, as well as the concentration and geometry of carbon nanotubes in the composite, is analyzed in detail. It is shown that varying these parameters allows one to change the pulse characteristics, opening up prospects for the creation of controllable optical elements and media. Keywords: polymer composite, carbon nanotubes, few-cycle optical pulses, high-frequency electric field.
  1. F.X. Kartner. Few-cycle laser pulse generation and its applications (Springer Berlin, Heidelberg, 2004)
  2. D.R. Carlson, P. Hutchison, D.D. Hickstein, S.B. Papp. Opt. Express, 27 (26), 37374 (2019). DOI: 10.1364/OE.27.037374
  3. N.N. Rosanov. Phys. Usp., 66 (10), 1059 (2023). DOI: 10.3367/UFNe.2022.12.039297
  4. W. Kaiser. Ultrashort laser pulses (Springer Berlin, Heidelberg, 2006)
  5. M.G. Burdanova, G.M. Katyba, R. Kashtiban, G.A. Komandin, E. Butler-Caddle, M. Staniforth, A.A. Mkrtchyan, D.V. Krasnikov, Y.G. Gladush, J. Sloan, A.G. Nasibulin, J. Lloyd-Hughes. Carbon, 173, 245 (2021). DOI: 10.1016/j.carbon.2020.11.008
  6. M. Moniruzzaman, K.I. Winey. Macromolecules, 39 (16), 5194 (2006). DOI: 10.1021/ma060733p
  7. M. Sabet. Iran Polym J., 34, 917 (2025). DOI: 10.1007/s13726-024-01419-1
  8. P. Harris. Carbon Nanotubes and Related Structures. New Materials for the Twenty-First Century (Tekhnosphera, M., 2003)
  9. S. Iijima. Nature, 354, 56 (1991). DOI: 10.1038/354056a0
  10. S. Wang, H. Liu, L.-M. Peng. Nature Commun., 8, Article no. 15649 (2017). DOI: 10.1038/ncomms15649
  11. Y. Wang, G. Sun, X. Zhang, X. Zhang, Z. Cui. Adv. Electron. Mater., 10 (10), 2400124 (2024). DOI: 10.1002/aelm.202400124
  12. J.-J. Li, K.-D. Zhu. Opt. Express, 20 (6), 5840 (2012). DOI: 10.1364/OE.20.005840
  13. S.Y. Set, H. Yaguchi, Y. Tanaka, M. Jablonski. J. Lightwave Technol., 22, 51 (2004)
  14. Y. Chen, Y. Lin, Y. Liu, J. Doyle, N. He, X. Zhuang, J. Bai, W.J. Blau. J. Nanosci. Nanotechnol., 7 (4-5), 1268 (2007). DOI: 10.1166/jnn.2007.308
  15. C. Hoecker, F. Smail, M. Pick, L. Weller, A.M. Boies. Sci. Rep., 7, 14519 (2017). DOI: 10.1038/s41598-017-14775-1
  16. T. Fujimori, D. Yamashita, Y. Kishibe, M. Sakai, H. Inoue, T. Onoki, J. Otsuka, D. Tanioka, T. Hikata, S. Okubo, K. Akada, J. Fujita. Sci. Rep., 12, 1285 (2022). DOI: 10.1038/s41598-022-05297-6
  17. Y.-L. Li, I.A. Kinloch, A.H. Windle. Science, 304, 276 (2004). DOI: 10.1126/science.1094982
  18. W. Xu, Y. Chen, H. Zhan, J.N. Wang. Nano Lett., 16, 946 (2016). DOI: 10.1021/acs.nanolett.5b03863
  19. R.J. Headrick, D.E. Tsentalovich, E.A. Bengio. Adv. Mater., 30, 1704482 (2018). DOI: 10.1002/adma.201704482
  20. D. Tsentalovich, R.J. Headrick, F. Mirri, J, Hao, N. Behabtu, C.C. Young, M. Pasquale. ACS Appl. Mater. Interfaces, 9, 36189 (2017). DOI: 10.1021/acsami.7b10968
  21. J. Lee, Y. Jung, J. Park, H.S. Lee, Y.-K. Kim, C.R. Park, H.S. Jeong, S.M. Kim. Nat. Commun., 10, 2962 (2019). DOI: 10.1038/s41467-019-10998-0
  22. O.-K. Park, H. Choi, H. Jeong, Y. Jung, J. Yu, J.K. Lee, J.Y. Hwang, S.M. Kim, Y. Jeong, C.R. Park, M. Endo, B.-C. Ku. Carbon, 118, 413 (2017). DOI: 10.1016/j.carbon.2017.03.079
  23. E.G. Fedorov, A.V. Zhukov, R. Bouffanais, N.N. Konobeeva, E.V. Boroznina, B.A. Malomed, H. Leblond, D. Mihalache, M.B. Belonenko, N.N. Rosanov, T.F. George. Phys. Rev. B, 103 (8), 085111 (2021). DOI: 10.1103/PhysRevB.103.085111
  24. N.N. Konobeeva, E.G. Fedorov, N.N. Rosanov, A.V. Zhukov, R. Bouffanais, M.B. Belonenko. J. Appl. Phys., 126, 203103 (2019). DOI: 10.1063/1.5128365
  25. N.N. Konobeeva. Optik, 157, 521 (2018). DOI: 10.1016/j.ijleo.2017.11.133
  26. E.N. Galkina, M.B. Belonenko. Opt. Spectr., 129 (10), 1280 (2021). DOI: 10.21883/EOS.2022.13.53983.1838-21
  27. S.V. Belibikhin, N.N. Konobeeva. Nanosystems: Phys., Chem., Mathem., 15 (1), 60 (2024). DOI: 10.17586/2220-8054-2024-15-1-60-64
  28. W.Z. Li, S.S. Xie, L.X. Qian, B.H. Chang, B.S. Zou, W.Y. Zhou, R.A. Zhao, G. Wang. Science, 274, 1701 (1996). DOI: 10.1126/science.274.5293.1701
  29. E. Flahaut, A. Peigney, W.S. Bacsa, R.R. Bacsa, C. Laurent. J. Mater. Chem., 14, 646 (2004). DOI: 10.1039/B312367G
  30. K. Hata, D.N. Futaba, K. Mizuno, T. Namai. Science, 306, 1362 (2004). DOI: 10.1126/science.1104962
  31. F.J. Garc'i a-Vidal, J.M. Pitarke, J.B. Pendry. Phys. Rev. Lett., 78, 4289 (1997). DOI: 10.1103/PhysRevLett.78.4289
  32. F.G. Bass, A.A. Bulgakov, A.P. Tetervov. Vysokochastotnye svoistva poluprovodnikov so sverkhreshetkami (Nauka, M., 1989) (in Russian)
  33. A.V. Eletskii. Phys. Usp., 40, 899 (1997). DOI: 10.1070/PU1997v040n09ABEH000282
  34. G. Gupta, B. Rajasekharan, R.J.E. Hueting. IEEE Trans Electron Devices, 64 (8), 3044 (2017). DOI: 10.1109/TED.2017.2712761
  35. R.J.E. Hueting, G. Gupta. Electrostatic doping and devices. In: M. Rudan, R. Brunetti, S. Reggiani (eds). Springer handbook of semiconductor devices. (Springer, Cham, 2022), p. 371-389. DOI: 10.1007/978-3-030-79827-7_11
  36. S. Cristoloveanu, K.H. Lee, H. Park, M.S. Parihar. Solid State Electron., 155, 32 (2019). DOI: 10.1016/j.sse.2019.03.017
  37. L. Duclaux. Carbon, 40 (10), 1751 (2002). DOI: 10.1016/S0008-6223(02)00043-X
  38. M.V. Kharlamova, M. Sauer, T. Saito, Y. Sato, K. Suenaga, T. Pichler, H. Shiozawa. Nanoscale, 7, 1383 (2015). DOI: 10.1039/C4NR05586A
  39. M.I. Paukov, S. Sun, A.A. Vorfolomeeva, A.V. Syuy, R.I. Romanov, M.S. Mironov, A.A. Vyshnevyy, G.A. Komandin, L.G. Bulusheva, A.V. Okotrub, A.V. Arsenin, V. Volkov, Y. Zhang, M.G. Burdanova. Carbon, 230, 119580 (2024). DOI: 10.1016/j.carbon.2024.119580
  40. L. Britnell, R.V. Gorbachev, R. Jalil, B.D. Belle, F. Schedin, A. Mishcenko, T. Georgiou, M.I. Katsnelson, L. Eaves, S.V. Morozov, N.M.R. Peres, J. Leist, A.K. Geim, K.S. Novoselov, L.A. Ponomarenko. Science, 335 (6071), 947 (2012). DOI: 10.1126/science.12184
  41. M.D. Bishop, G. Hills, T. Srimani, C. Lau, D. Murphy, S. Fuller, J. Humes, A. Ratkovich, M. Nelson, M.M. Shulaker. Nature Electronics, 3, 492 (2020). DOI: 10.1038/s41928-020-0419-7
  42. S.M. Sze, K.K. Ng. Physics of semiconductor devices (John Wiley \& Sons, Hoboken, 1968)
  43. D. Somvanashi, S. Kallatt, C. Venkatesh, S. Nair, G. Gupta, J.K. Anthony, D. Karmakar, K. Majumdar. Phys. Rev. B, 96, 205423 (2017). DOI: 10.1103/PhysRevB.96.205423
  44. J. Shi, H. Chu, Y. Li, X. Zhang, H. Pan, D. Li. Nanoscale, 11, 7287 (2019). DOI: 10.1039/C8NR10174D
  45. W.-D. Cheng, D.-S. Wu, X.-D. Lim Y.-Z. Lan, H. Zhang, D.-G. Chen, Y-J. Gong, Y-C. Zhang, F.-F. Li, J. Shen, Z.-G. Kan. Phys. Rev. B, 70 (15), id. 155401. DOI: 10.1103/PhysRevB.70.155401
  46. V.A. Osipov, V.K. Fedyanin. Polyacetylene i dvumerniye modeli kvantovoy teoryii polya (JINR, Dubna, 1985) (in Russian)
  47. G.A. Korn, T.M. Korn, Mathematical handbook for scientists and engineers (McGraw Hill, NY., 1968)
  48. N.R. Sadykov, S.E. Jolnirov. Phys. E: Low-dimensional systems and nanostructures, 128, 114574 (2021). DOI: 10.1016/j.physe.2020.114574
  49. J.W. Thomas. Numerical partial differential equations-finite difference methods (Springer-Verlag, NY., 1995)

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru