Dynamics of photoexcited charge carriers in the i-layer of an AlGaAs/GaAs heterostructure p-i-n diode
Trukhin V.N.
1, Malevich V.L.2,3, Fan X.4, Mustafin I.A.1, Kalinovskiĭ V.S.1, Kontrosh E.V.1
1Ioffe Institute, St. Petersburg, Russia
2Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus
3B.I.Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk, Belarus
4ITMO University, St. Petersburg, Russia
Email: valera.truchin@mail.ioffe.ru
We investigated the dynamics of photoexcited carriers in the i-layer of a p-i-n diode using dynamic emission terahertz spectroscopy with sub-picosecond resolution. Depending on the photoexcitation intensity and electric field strength, electric field screening in the depleted i-region can occur in ballistic or diffusion-drift regime. The slow stage of electric field screening is due to the transport of photoexcited electrons through the depleted i-layer and their subsequent escape into the n-region. The dynamics of electric field recovery in the depleted region of a p-i-n diode are determined by the drift of holes following the escape of electrons from the i-layer and the recharging of the p-i-n diode capacitance via the external circuit, as well as the relaxation of charge carriers captured during the drift process into deep impurity levels in GaAs. Keywords: terahertz radiation, p-i-n diode, dynamics, screening.
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