Self-field of a Hall probe and its effect on the parameters of objects under study
Rostami Kh. R.1, Nikitin I. P. 1
1Fryazino Branch, Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Moscow oblast, Russia
Email: rostami@ms.ire.rssi.ru
Attention is drawn to the effect of the self-field HHT of bias current IHT through a Hall transducer (HT) on the objects of study and the measurement accuracy of the Hall magnetometer. The field HHT of n-InSb-i-GaAs heteroepitaxial HT is considered. It is found that the force lines of the induction of HHT undergo a stepwise change in their direction at the edges of a thin epitaxial n-InSb film. In the case of nonuniform distribution of IHT over the cross section of the film, these jumps create a voltage across the Hall contacts due to the anisotropy, growth-induced defects, and noneqipotentiality of the Hall contacts, thus leading to measurement error. Exact compensation of HHT by the field of a current in antiphase to IHT makes it possible not only to eliminate the effect of the self-field on the objects of study but also to lower the detection threshold of the magnetometer from ~ 2.5· 10-7 to ~ 5.75· 10-9 T in the range of fields from 2.5· 10-9 to 5· 10-7 T and temperatures from 77.4 to 150 K. Keywords: Hall effect, heteroepitaxial structure, self-field, antiphase current, high-temperature superconductors.
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