The present study investigates influence of the intrinsic field of bias current through the Hall sensor on objects under study and accuracy of measurements of the Hall magnetometer. We have considered the intrinsic field of a heteroepitaxial sensor with a n-InSb-i-GaAs structure. For the studies, the unit is designed to move the studied sensor in relation to a measurement along the Z axis as far as 25 mm with accuracy ~1 μm, to rotate the studied sensor around its axis for 360^o with accuracy 2^o as well as to linearly move it along the X axis as far as 5 mm with accuracy ~1 μm. It is found that due to discontinuities of a circuit of power lines of intrinsic field induction edges of a thin epitaxial n-InSb film produce induction surges near Hall contacts of the sensor. With heterogeneous distribution of the bias current across a film cross section due to anisotropy and defects created by mechanical stresses in the film during its growth on a substrate, non-equipotentiality of the Hall contacts and with arbitrary arrangement of output sensor wires, it results in Hall contacts voltage that is superimposed onto a useful Hall signal, thereby causing an error. Keywords: Hall sensor, Hall magnetometer, intrinsic field, bias current.

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Дата начала обработки статистических данных - 27 января 2016 г.