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Formation of GaMnAs ferromagnetic layers by implantation of Mn ions using an accelerator with a vacuum-arc source
Russian version
Danilov Yu. A.1, Antonov I. N.1, Bachurin V. I.2, Ved M.V.1, Vikhrova O. V.1, Dudin Yu. A.1, Kalentyeva I.L.1, Kryukov R. N.1, Nezhdanov A. V.1, Parafin A. E.3, Simakin S. G.2, Yunin P. A.3
1Lobachevsky State University, Nizhny Novgorod, Russia
2Valiev Institute of Physics and Technology of National Research Center Kurchatov Institute, Yaroslavl Branch, Yaroslavl, Russia
3Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Email: ved@nifti.unn.ru, vikhrova.olga@gmail.com
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The work is devoted to the study of the possibility of forming ferromagnetic GaMnAs layers by the manganese ion implantation method using an accelerator with a vacuum-arc source and subsequent pulsed laser annealing. It is shown that the implantation of Mn ions with doses of 2-5· 1016cm-2 and subsequent annealing with an energy density of ~ 300 mJ/cm2 make it possible to obtain ferromagnetic semiconductor layers with a Curie temperature of up to 120 K. The manganese distribution profiles and changes in the GaAs matrix composition are studied using secondary ion mass spectrometry and X-ray photoelectron spectroscopy. The study of the optical properties of the layers, including the Raman scattering spectra, confirmed the presence of a coupled plasmon-phonon mode, which is typical for heavily doped p-type semiconductors. Galvanomagnetic measurements revealed an anomalous Hall effect and negative magnetoresistance at temperatures below the Curie temperature. The results show the potential of using an accelerator with a vacuum-arc ion source to create ferromagnetic semiconductor structures. Keywords: ion implantation, pulsed laser annealing, ferromagnetism, diluted magnetic semiconductor, GaMnAs, vacuum arc accelerator.
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