Technical Physics Letters
To authors
Volumes and Issues
- 2026
- 2025
- 2024
- 2023
- 2022
Optical Band Gap of Pre-Lithiated Si@O@Al Composite
Rudy A.S.
1, Mironenko A. A.1, Naumov V. V.
1, Kurbatov S. V.
1, Churilov A. B.
1, Kozlov E. A.
1, Savenko O. V.
1
1Demidov State University, Yaroslavl, Russia
Email: rudy@uniyar.ac.ru, amironenko55@mail.ru, vvnau@rambler.ru, kurbatov-93@bk.ru, abchurilov@mail.ru, eakf@yandex.ru, savenko.oleg92@mail.ru
The paper presents the results on optical band gap measurements for the Si@O@Al:Lix anodic composite material, where x=0 at.%; 5 at.% and 9 at.%. Tauc plots were drawn and the optical band gap values were determined based on the absorption spectra of Si@O@Al:Lix thin films on a quartz substrate. The obtained values were attributed to band-to-band and impurity-to-band transitions. The increase in the optical band gap with increasing x is explained by the Burstein-Moss effect. The calculated energy values of Eg1=1.52 eV, Eg2=1.15 eV for x=0 at.%, Eg1=1.93 eV, Eg2=1.65 eV for x=5 at.% and Eg1=1.85 eV, Eg2=1.62 eV for x=9 at.% were attributed to band-to-band and impurity-to-band transitions, respectively. The optical band gap widening with increasing x>0 is explained by the Burstein-Moss effect. Keywords: anode material, degenerate semiconductor, band gap, Tauc plot.
- T.L. Kulova, A.A. Mironenko, A.M. Skundin, A.S. Rudy, V.V Naumov, D.E. Pukhov, Int. J. Electrochem. Sci., 11 (2), 1370 (2016). DOI: 10.1016/S1452-3981(23)15928-1
- A.A. Mironenko, I.S. Fedorov, A.S. Rudy, V.N. Andreev, D.Y. Gryzlov, T.L. Kulova, A.M. Skundin, Monatsh. Chem., 150 (10), 1753 (2019). DOI: 10.1007/s00706-019-02497-1
- A.P. Nugroho, N.H. Hawari, B. Prakoso, A.D. Refino, N. Yulianto, F. Iskandar, E. Kartini, E. Peiner, H.S. Wasisto, A. Sumboja, Nanomaterials, 11 (11), 3137 (2021). DOI: 10.3390/nano11113137
- A.D. Refino, N. Yulianto, I. Syamsu, A.P. Nugroho, N.H. Hawari, A. Syring, E. Kartini, F. Iskandar, T. Voss, A. Sumboja, E. Peiner, H.S. Wasisto, Sci. Rep., 11 (1), 19779 (2021). DOI: 10.1038/s41598-021-99173-4
- H. Li, Z. Wang, L. Chen, X. Huang, Adv. Mater., 21 (45), 4593 (2009). DOI: 10.1002/adma.200901710
- H. Li, H. Li, Y. Lai, Z. Yang, Q. Yang, Y. Liu, Z. Zheng, Y. Liu, Y. Sun, B. Zhong, Z. Wu, X. Guo, Adv. Energy Mater., 12 (7), 2102181 (2022). DOI: 10.1002/aenm.202102181
- A.S. Rudy, A.B. Churilov, A.A. Mironrenko, V.V. Naumov, S.V. Kurbatov, E.A. Kozlov, Tech. Phys. Lett., 48 (9), 7 (2022). DOI: 10.21883/TPL.2022.09.55072.19276
- A.S. Rudy, A.A. Mironenko, V.V. Naumov, A.B. Churilov, S.V. Kurbatov, Yu.S. Egorova, E.A. Kozlov, Tech. Phys., 68 (9), 1235 (2023). DOI: 10.21883/JTF.2023.09.56220.120-23 [A.S. Rudy, A.A. Mironenko, V.V. Naumov, A.B. Churilov, S.V. Kurbatov, Yu.S. Egorova, E.A. Kozlov, Tech. Phys., 68 (9), 1235 (2023). DOI: 10.61011/TP.2023.09.57363.120-23]
- J. Tauc, R. Grigorovici, A. Vancu, Phys. Status Solidi B, 15 (2), 627 (1966). DOI: 10.1002/pssb.19660150224
- F.L. Marti nez, M. Toledano-Luque, J.J. Gandi a, J. Carabe, W. Bohne, J. Rohrich, E. Strub, I. Martil, J. Phys. D, 40 (17), 5256 (2007). DOI: 10.1088/0022-3727/40/17/037
- F.L. Marti nez, A. Prado, I. Martil, G. Gonzalez-Di az, B. Selle, I. Sieber, J. Appl. Phys., 86 (4), 2055 (1999). DOI: 10.1063/1.371008
- Amorphous and liquid semiconductors, ed. by J. Tauc (Springer, 2012)
- P.K. Kashkarov, V.Yu. Timoshenko, Optika tverdogo tela i sistem ponizhennoi razmernosti (Fiz. Fak. Mosk. Gos. Univ., M., 2009) (in Russian)
- T. Moss, Proc. Phys. Soc. B, 67 (10), 775 (1954). DOI: 10.1088/0370-1301/67/10/306