Semipolar aluminum nitride: the epitaxy of bulk material on a nanostructured silicon substrate
Bessolov V. N.1, Kompan M. E.1, Konenkova E. V.1, Sharofidinov Sh. Sh.1, Solomnikova A. V.2, Scheglov M. P.1
1Ioffe Institute, St. Petersburg, Russia
2St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
Email: lena@triat.mail.ioffe.ru
The epitaxial growth of bulk semipolar AlN layers by hydride vapour-phase epitaxy on a nanostructured silicon substrate (NP-Si(001)) was studied by X-ray diffractometry, atomic force microscopy, and Raman scattering. The semipolar layer was epitaxially grown at high growth rates in an argon atmosphere, separated from the substrate, had a thickness of 140 μm and a half-width of the X-ray diffraction curve AlN(101 1) ωtheta=60 arcmin. It was found that the bulk semipolar AlN layer has a lower amount of stretching after removal of the substrate than the layer on the NP-Si(100) substrate. Keywords: bulk semipolar aluminum nitride, nanostructured silicon substrate, hydride vapour-phase epitaxy
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