Leshchenko E. D.1, Dubrovskii V. G.2
1Submicron Heterostructures for Microelectronics, Research & Engineering Center, RAS, Saint-Petersburg, Russia
2St. Petersburg State University, St. Petersburg, Russia
Email: leshchenko.spb@gmail.com
The formation of axial heterostructures in IIIVxV1-x nanowires is studied theoretically. We consider the case when the nanowire radius changes during the growth. It is shown that an increase in the radius has almost no effect on the heterointerface of thin nanowires. The effect becomes noticeable at a high rate of radial growth or for thick nanostructures. It is shown that the radius increment during growth leads to the formation of a sharper heterojunction, which is especially pronounced in nanostructures with a large radius. Keywords: modelling, nanowires, III-V-V heterostructures, interfacial profile.
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