Study of the influence of current spreading on the operating characteristics of GaP/GaPNAs/GaP micro-LEDs on Si
Dvoretckaia L. N.1, Mozharov A. M. 1, Volosatova V. S. 1, Fedorov V. V. 1,2, Kaveev A. K. 1,3, Miniv D. V. 1, Mukhin I. S. 1,2
1Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
2Peter the Great Saint-Petersburg Polytechnic University, St. Petersburg, Russia
3Ioffe Institute, St. Petersburg, Russia
Email: Liliyabutler@gmail.com
A light-emitting semiconductor device based on the GaP/GaPNAs/GaP material system operating in the red-orange spectral range is considered. Numerical modeling of current spreading in the material system under consideration is presented, as well as experimental data demonstrating electroluminescence in the red frequency range. It is shown that for p-i-n GaP/GaPNAs/GaP heterostructures, when forming device light-emitting regions, the creation of separating mesas is not required, since the light emission region is largely limited to the region of the top electrode, which significantly simplifies the technological process of manufacturing LEDs. Keywords: GaPNAs on Si, GaP on Si, textured GaP(NAs), matrix LED, silicon, semiconductors.
- G. Roelkens, L. Liu, D. Liang, R. Jones, A. Fang, B. Koch, J. Bowers, Laser Photon. Rev., 6, 751 (2010). DOI: 10.1002/lpor.200900033
- H. Schmid, M.Borg, K. Moselund, L. Gignac, C.M. Breslin, J. Bruley, D. Cutaia, H. Riel, Appl. Phys. Lett., 106 (23), 233101 (2015). DOI: 10.1063/1.4921962
- D. Chen, Y.C. Chen, G. Zeng, D.W. Zhang, H.L. Lu, Research, 6, 0047 (2023). DOI: 10.34133/research.0047
- U. Koren, S. Margalit, T. Chen, K. Yu, A. Yariv, N. Bar-Chaim, I. Ury, IEEE J. Quantum Electron., 18 (10), 1653 (1982). DOI: 10.1109/JQE.1982.1071397
- F. Zubov, M. Maximov, E. Moiseev, A. Vorobyev, A. Mozharov, Y. Berdnikov, N. Kaluzhnyy, S. Mintairov, M. Kulagina, N. Kryzhanovskaya, A. Zhukov, Opt. Lett., 46 (16), 3853 (2021). DOI: 10.1364/OL.432920
- U. Gosele, Q.Y. Tong, Annu. Rev. Mater. Sci., 28 (1), 215 (1998). DOI: 10.1146/annurev.matsci.28.1.215
- D. Pasquariello, K. Hjort, IEEE J. Sel. Top. Quantum Electron., 8 (1), 118 (2002). DOI: 10.1109/2944.991407
- X. Wu, X. Zhu, S. Wang, X. Tang, T. Lang, V. Belyaev, A. Abduev, A. Kazak, C. Lin, Q. Yan, J. Sun, Materials, 18 (8), 1783 (2025). DOI: 10.3390/ma18081783
- J.E. Ryu, S. Park, Y. Park, S.W. Ryu, K. Hwang, H.W. Jang, Adv. Mater., 35 (43), 2204947 (2023). DOI: 10.1002/adma.202204947
- R. Kudrawiec, J. Appl. Phys., 105 (6), 063529 (2009). DOI: 10.1063/1.3087781
- I.H. Ho, G.B. Stringfellow, J. Cryst. Growth, 178 (1-2), 1 (1997). DOI: 10.1016/S0022-0248(97)00078-X
- A.A. Lazarenko, E.V. Nikitina, A.S. Gudovskikh, A.I. Baranov, M.S. Sobolev, E.V. Pirogov, A.Y. Egorov, Opt. Laser Technol., 129, 106308 (2020). DOI: 10.1016/j.optlastec.2020.106308
- A.V. Babichev, V.Yu.Butko, M.S. Sobolev, E.V. Nikitina, N.V. Kryzhanovskaya, A.Yu. Egorov, Semiconductors, 46 (6), 796 (2012). DOI: 10.1134/S106378261206005X
- A.A. Lazarenko, E.V. Nikitina, E.V. Pirogov, A.S. Gudovskikh, A.I. Baranov, A.M. Mizerov, M.S. Sobolev, J. Phys.: Conf. Ser., 2227 (1), 012021 (2022). DOI: 10.1088/1742-6596/2227/1/012021