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Photoelectric properties of amorphous Ga2O3, films doped with phosphorus and selenium
Podzyvalov S.N.
1,2, Kalygina V.M.
1, Lysenko A.B.
1,2
1Tomsk State University, Tomsk, Russia
2Laboratory of optical crystals Ltd., Tomsk, Russia
2Laboratory of optical crystals Ltd., Tomsk, Russia
Email: cginen@yandex.ru, vmkalygina@mail.ru, festality@yandex.ru
Data on the influence of selenium and phosphorus on the electrical and photoelectric characteristics of gallium oxide films are presented. Planar metal-Ga2O_3-metal resistive structures were fabricated on sapphire substrates using RF magnetron sputtering, with a distance of 1 mm between Pt electrodes. The effects of Se, P, and a mixture of Se + P on the dark currents and photocurrents of the samples under irradiation with wavelengths of λ=254 and 808 nm were investigated. Keywords: gallium oxide, doping, sapphire substrate, UV radiation.
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