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Thermoelectric properties of InGaAs/GaAs quantum dots
Russian version
Kuznetsov Yu. M. 1,2, Dorokhin M. V. 1,2, Demina Polina Borisovna 1,2, Baidus Nikolay Vladimirovich 1,2, Zdoroveyshchev Anton Vladimirovich 1,2
1Research Institute for Physics and Technology, Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, Russia
2Lobachevsky State University, Nizhny Novgorod, Russia
Email: y.m.kuznetsov@unn.ru, dorokhin@nifti.unn.ru, demina@phys.unn.ru, bnv@nifti.unn.ru, zdorovei@nifti.unn.ru
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The paper presents studies of thermoelectric characteristics of structures representing an array of InAs quantum dots formed on a semi-insulating GaAs substrate by the MOCVD epitaxy method. The theoretical foundations of increasing the thermoelectric efficiency in low-dimensional systems in relation to bulk analogs are described. By comparing the results of measuring the temperature dependences of thermoelectric characteristics and photoluminescence (to estimate the thermal emission of charge carriers), the effect of the quantum dot array on the value of the Seebeck coefficient and specific resistance is demonstrated. It is found that the introduction of a quantum dot array with a sufficiently large nanocluster size into the structure provides an increase in the thermoelectric effect and, accordingly, an increase in the power factor. Keywords: Thermoelectrics, thermoelectric efficiency, quantum dots, thin films, nanoscale structures.
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