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UV detectors based on Ga2O3 films with high-speed performance
Russian version
Almaev D. A.1,2, Tsymbalov A. V.1, Kopyev V. V.1
1Tomsk State University, Tomsk, Russia
2Tomsk State University of Control Systems and Radioelectronics, Tomsk, Russia
Email: almaev001@mail.ru
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The paper presents a study of the influence of annealing temperature in an Ar atmosphere and growth time of gallium oxide films on the electrical and photoelectric characteristics of Pt/Ga2O3 structures. Gallium oxide films were obtained by RF-magnetron sputtering on sapphire substrates with the base orientation (0001). Ga2O3 films are characterized by high transparency in the long-wave UV (UVA) and visible (VIS) ranges T > 80 %. The maximum photosensitivity value corresponds to structures annealed at 900 oC with an active region thickness of d = 190 nm. The values of responsivity and photo-to-dark current ratio were 134 mA/W and 5.2· 105 a. u, respectively, at a voltage of 100 V. The structures are characterized by high speed-performance, the shortest response and recovery times at a voltage of 10 V were 2.1 ms and 0.6 ms, respectively. Keywords: photodetector, gallium oxide, RF-magnetron sputtering, UV radiation, speed- performance.
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