Epitaxial growth of thin Ca1-xBaxF2 films on Si(111) and study of electro-physical characteristics of Ca1-xBaxF2-based metal-insulator-semiconductor structures
Alexeev E. A.1, Kaveev A. K.1, Li G. V.1, Yusupova Sh. A.1, Vexler M. I.1
1Ioffe Institute, St. Petersburg, Russia
Email: vexler@mail.ioffe.ru
In the context of searching for alternative insulators for Silicon-based electronics, beyond mainstream high-k, planar Ca1-xBaxF2 films with a 2-4 nm nominal thickness and various stoichiometric composition were grown on the n-Si (111) wafers. The current-voltage characteristics of the Al-gated MIS capacitors (Al/Ca1-xBaxF2/Si) were recorded. Qualitatively, a behavior of these devices agreed to that predicted for MIS (metal-insulators-semiconductor) tunneling systems. Similar behavior of the I-V characteristics was revealed for different values of the parameter x, but the spread of characteristics was smaller at x=0.25. In the future, Ca1-xBaxF2 solid solutions can be used for gate dielectrics of field-effect transistors with various topologies. Keywords: Ca1-xBaxF2, molecular beam epitaxy, metal-insulator-semiconductor structure, tunneling, current-voltage characteristics.
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