Approach for obtaining Ge/Si(001) self-assembled hut wires for hole spin qubits
Yurasov D.V.1, Shaleev M.V.1, Novikov A.V.1
1Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Email: Inquisitor@ipmras.ru, shaleev@ipmras.ru, anov@ipmras.ru
Method for fabrication of self-assembled Ge hut wires on Si(001) by molecular beam epitaxy is proposed. The approach is based on deposition of different amounts of Ge in two zones of a Si substrate and control of the surface morphology of one of the zones by reflection high-energy electron diffraction. It allows the deposition of a certain amount of Ge being arbitrarily close to the critical thickness of pseudomorphic growth in the second zone. Along with the optimized parameters of post-growth annealing, this allowed forming Ge hut wires with different parameters. Ge wires longer than 0.5 μm with low surface density were obtained, which are suitable for fabrication of hole spin qubits. Keywords: SiGe heterostructures, molecular beam epitaxy, self-assembled islands, Ge hut wires.
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