Recovery of EUV optical constants of thin films using laboratory reflectometry data
N.V. Zagaynov1, S. A. Garakhin1, S.S. Morozov1, V.N. Polkovnikov1, N. I. Chkhalo 1
1Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Email: kolazagaunow41@gmail.com
The study has investigated whether laboratory reflectometry methods may be used for measuring optical constants of materials in extreme ultraviolet (EUV) range. Analysis has been performed on tantalum compounds used as absorbers for mask blanks. Experiment for reflection coefficient measurement depending on the wavelength and angle of incidence for lithographic mask absorber layers has been numerically simulated. The model considers real specifications of laboratory devices and measurement errors. Numerical experiment has shown that laboratory reflectometry was applicable to identification of parameters of thin films on substrates, and it has been proved experimentally that the method was suitable for real applications. Such structural parameters as densities, roughnesses and thicknesses can be recovered with high accuracy. Deviations of all experimental measurements from simulated values are less than 1 %, the experiment has shown good accuracy for optical constant recovery. Keywords: thin films, reflectometry, optical constants, tantalum, absorption, diffractometer, reflectometer, reflection coefficient, X-ray radiation, X-ray lithography.
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