Layer-by-layer chemical and phase analysis of ultrathin niobium nitride films
O.I. Lubenchenko1, A.V. Lubenchenko1, D.S. Lukyantsev1, D.A. Ivanov1, I.V. Ivanova1, O.N. Pavlov1
1National Research University Moscow Power Engineering Institute, Moscow, Russia
Email: IvanovaOlI@mpei.ru
The study investigated various ultrathin niobium nitride films that differed in the type of substrate, presence of a buffer layer, surface oxidation time and rate, and ion beam impact. Depth profiling of ultrathin niobium nitride films was carried out by a non-destructive method for chemical and phase depth profiling using (or based on) X-ray photoelectron spectroscopy. The study has shown that a layer with a modified niobium nitride phase was formed under the oxide layer during atmospheric oxidation of ultrathin niobium nitride film; a 1 nm interface layer was formed when niobium nitride ultrathin film was deposited on an oxidized silicon substrate by magnetron sputtering; no interface layer was formed when ultrathin niobium nitride film was deposited onto a sapphire substrate; oxide layer thickness and phase composition depended on the niobium nitride film oxidation time and rate; not only the NbN film thickness, but also the phase composition of changed under the action of ion beam evaporation. Keywords: niobium nitride, ultrathin films, X-ray photoelectron spectroscopy, chemical phase depth profiling.
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