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Probe microscopy of resistive switching in nanocrystalline copper oxide (CuxO)
Russian version
Fedorov L.Yu. 1,2, Karpov I. V. 1,2, Pavlov A. V. 1,2, Zhilkashinova A. M. 3, Lyamkin A. I. 1,2
1Krasnoyarsk Scientific Center of the Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk, Russia
2Siberian Federal University, Krasnoyarsk, Russia
3Sarsen Amanzholov East Kazakhstan University, Ust-Kamenogorsk, Kazakhstan
Email: 1401-87@mail.ru, karpovsfu@mail.ru, alexandr_pavlov_1988@mail.ru, almira_1981@mail.ru, doca@bk.ru
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The paper studies the effect of resistive switching in nanocrystalline copper oxide (CuxO) films synthesized by vacuum arc deposition in an argon-oxygen atmosphere. The structural and electrophysical properties of films with different phase compositions (Cu2O, CuO, mixed phases) are studied using X-ray diffraction, Raman and photoluminescence spectroscopy, and atomic force microscopy. It is found that changing the partial pressure of oxygen during synthesis allows one to control the stoichiometry and defect structure of oxides. Conductive atomic force microscopy modes are used for local analysis of resistive switching, demonstrating bipolar behavior for mixed CuxO phases. The results confirm the promise of nanocrystalline copper oxides for creating memristors with controlled characteristics. Keywords: copper oxides, stoichiometry, vacuum arc, memristors.
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