Spectroscopy of van der Waals structures based on the transition metal dichalcogenide WS2
Belova D.D.1,2, Zedomi T.E.1, Kotova L.V.1,2, Kocherushko V.P.1
1Ioffe Institute, St. Petersburg, Russia
2Baltic State Technical University "VOENMEKH" named after Marshal D. F. Ustinov, St. Petersburg, Russia
Email: kotova@mail.ioffe.ru

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The low-temperature photoluminescence and light reflection spectra of thin layers (down to monolayers) of WS2 on oxidised silicon substrates were investigated. A rich interference structure was observed in the reflection spectra. By comparing the reflection spectra from the SiO2/Si substrate and from WS2 using the known refractive index, the thicknesses of these layers were determined. It was found that most of the lines in the reflection spectra are associated with the Si/SiO2 layer. A series of lines previously attributed to the ground and excited states of the exciton were observed in the photoluminescence and reflection spectra from WS2. It was established that these lines are associated with light interference near the exciton resonance in WS2 at an energy of 2.15 eV. Keywords: spectroscopy, transition metal dichalcogenides, excitons.
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