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Lateral photovoltaic effect in the Fe3O4/SiO2/n-Si structure: influence of the SiO2 thickness
Russian version
T.A. Pisarenko1, D.A. Tsukanov1,2, V.V. Balashev1,2, A.A. Yakovlev1
1Institute of Automation and Control Processes, Far East Branch, Russian Academy of Sciences, Vladivostok, Russia
2Far Eastern Federal University, Vladivostok, Russia
Email: tata_dvo@iacp.dvo.ru
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The work provides research on the lateral photovoltaic effect in the Fe3O4/SiO2/n-Si structure with the thickness of the silicon oxide layer 2 and 5 nm. It has been shown that increase of the thickness of the SiO2 layer in the studied structure results in a changed type of dependences of sensitivity and nonlinearity of lateral photovoltage on the thickness of the Fe3O4 film as well as a form of photoresponse signals under pulsed illumination. It has been established that a change of photosensitivity in the Fe3O4/SiO2/n-Si structure with increase of the thickness of SiO2 is due to both influence of surface and interface states at the SiO2/n-Si interface and redistribution of channel conductivity as well. Extrema on the thickness dependence of the photovoltaic characteristics are related to the quantum-size effect which modulates a height of the built-in barrier. Keywords: optoelectronic devices, photovoltaic effect, photoresponse, magnetite, silicon.
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