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Current transfer in the tunneling microscope probe-tunnel gap-layer of A3B5 and A2B6 semiconductors quantum dots system under illumination
Russian version
Kabanov V. F.1, Mikhailov A. I.1, Gavrikov M. V.1
1Saratov State University, Saratov, Russia
Email: v7021961@yandex.ru, mikhailovai13@mail.ru, maks.gavrikov.96@gmail.com
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In this work, the features of current transfer in the system of a tunneling microscope probe-tunnel gap-layer of quantum dots of A3B5 and A2B6 semiconductors under the influence of external electromagnetic radiation of the visible spectral range are investigated. It is established, that the peaks on the normalized differential tunneling current-voltage characteristics corresponding to discrete levels of the energy spectrum of the studied quantum dots can disappear under illumination, which is due to the inclusion of photogenerated electrons in the current transfer process. Keywords: semiconductor quantum dots, energy spectrum, photogeneration, tunnel current-voltage characteristics.
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