Technical Physics

To authors

Volumes and Issues

2025
- 1 2 3 4 5
2024
- 1 2 3 4 5 6 7 8 9 10 11 12
2023
- 1 2 3 4 5 6 7 8 9 10 11 12
2022
- 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Influence of FeS nanoinclusions on photoelectric characteristics of CdS:Fe

Russian version

Stetsyura S.V.

¹, Kharitonova P.G.

¹, Zakharevich A.M.

¹Saratov State University, Saratov, Russia

Email: haritonovapg@gmail.com

PDF

Abstract
References

We modified the surface of single-crystal CdS using an organic coating of iron arachinate obtained by the Langmuir-Blodgett technology, followed by annealing of the resulting hybrid structure. We have demonstrated the possibility of forming a heterophase structure of the diluted magnetic semiconductor CdS-FeS, which has an extended range of properties. We carried out a study of the chemical composition before and after modification of the CdS surface by an organic coating. Variation the number of deposited iron arachinate monolayers made it possible to change the parameters of the limited iron source within the required limits, ensuring the formation of ferromagnetic phase nanoinclusions of size-defined at a target depth. The prediction of the size of the FeS phase and its distribution by depth was carried out by modeling the simultaneous processes of Fe diffusion, formation and precipitation of nanosized inclusions of the magnetic phase. We have determined the optimal number of monolayers in the coating (25-35), which ensures the formation of precipitates larger than 3 nm at a depth of at least 0.21 μm, and an increase in the photosensitivity of the obtained material by 20-40 times. Keywords: heterophase material, nanoscale precipitates, photosensitivity, Langmuir-Blodgett layers.

J. Cibert, D. Scalbert. Spin Phys. Semicond., 157, 389 (2008), DOI: 10.1007/978-3-540-78820-1_13
W. Zaleszczyk, E. Janik, A. Presz, P. D uzewski, S. Kret, W. Szuszkiewicz, J.F. Morhange, E. Dynowska, H. Kirmse, W. Neumann, A. Petroutchik, L.T. Baczewski, G. Karczewski, T. Wojtowicz. Nano Lett., 8 (11), 4061 (2008). DOI: 10.1021/nl802449g
F. Matsukura, H. Ohno. Nanomagnetism and Spintronics, ed. Teruya Shinjo (Elsevier, Nanomagnetism and Spintronics, 277, 2009), DOI: 10.1016/B978-0-444-53114-8.00007-8
W. Dobrowolski, J. Kossut, T. Story. Handbook Magn. Mater., 15, 289 (2003). DOI: 10.1016/S1567-2719(03)15003-2
A. Bukhtiar, B. Zou. Mater. Adv., 5 (17), 6739 (2024). DOI: 10.1039/D4MA00523F
D. Li, X. Zhang, W. He, Y. Peng, G. Xiang. Sci. China Mater., 67, 279 (2024). DOI: 10.1007/s40843-023-2657-2
J. Li, X. Zhang, J. Lu, W. He, Y. Nie, Y. Peng, G. Xiang. Nanoscale, 15 (5), 2206 (2023). DOI: 10.1039/D2NR05244J
Y. Fan. J. Phys.: Conf. Series, 2608, 012046 (2023). DOI: 10.1088/1742-6596/2608/1/012046
R. Khan, I. Shigidi, S. Al Otaibi, K. Althubeiti, S.S. Abdullaev, N. Rahman, M. Sohail, A. Khan, S. Iqbal, T. Del Rosso, Q. Zaman, A. Khan. RSC Adv., 12 (55), 36126 (2022). DOI: 10.1039/D2RA06637H
F. Pan, C. Song, X.J. Liu, Y.C. Yang, F. Zeng. Mater. Sci. Eng.: R: Reports, 62 (1), 1 (2008). DOI: 10.1016/j.mser.2008.04.002
B. Sharma, R. Lalwani, R. Das. Optik, 281, 170831 (2023). DOI: 10.1016/j.ijleo.2023.170831
P. Li, C. Zhang, J. Lian, S. Gao, X. Wang. Solid State Commun., 151 (22), 1712 (2011). DOI: 10.1016/j.ssc.2011.07.042
S.V. Stetsyura, P.G. Kharitonova. St. Petersburg State Polytechnical Univer. J. Phys. Mathem., 16 (1.2), 236 (2023). DOI: 10.18721/JPM.161.236
L.A. Hernandez, F.Marti n, E. Berrios, G. Riveros, D.M. Gonzalez, E. Gonzalez, S. Lizama, F. Hernandez. Arabian J. Chem., 13 (12), 8758 (2020). DOI: 10.1016/j.arabjc.2020.10.006
Y. Li, S. Chen, K. Zhang, S. Gu, J. Cao, Y. Xia, C. Yang, W. Sun, Z. Zhou. New J. Chem., 44 (34), 1144 (2020). DOI: 10.1039/D0NJ01424A
K. Kaur, G.S. Lotey, N.K. Verma. J. Mater. Sci.: Mater. Electron., 25 (6), 2605 (2014). DOI: 10.1007/s10854-014-1918-y
S.V. Stetsyura, P.G. Kharitonova, I.V. Malyar. Appl. Phys., 5, 66 (2020)
S. Chandramohan, A. Kanjilal, S.N. Sarangi, S. Majumder, R. Sathyamoorthy, T. Som. Appl. Phys. A, 99 (4), 837 (2010). DOI: 10.1007/s00339-010-5598-z
H.R. Dizaji, M. Ghasemian, M.H. Ehsani. Surf. Rev. Lett., 19 (2), 1250012 (2012). DOI: 10.1142/S0218625X12500126
J.H. Al-Zahrani, M. El-Hagary, A. El-Taher. Mater. Sci. Semicond. Processing, 39, 74 (2015). DOI: 10.1016/j.mssp.2015.04.042
B. Lohitha, S. Thanikaikarasan, S. Roji Marjorie. Mater. Today: Proceedings, 33 (7), 3068 (2020). DOI: 10.1016/j.matpr.2020.03.513
Z.K. Heiba, A.M. El-naggar, M.B. Mohamed, A.M. Kamal, M.M. Osman, A.A. Albassam, G. Lakshminarayana. Optical Mater., 122, 111788 (2021). DOI: 10.1016/j.optmat.2021.111788
N. Badera, B. Godbole, S.B. Srivastava, P.N. Vishwakarma, L.S. Sharath Chandra, D. Jain, M. Gangrade, T. Shripathi, V.G. Sathe, V. Ganesan. Appl. Surf. Sci., 254 (21), 7042 (2008). DOI: 10.1016/j.apsusc.2008.05.218
S.V. Stetsyura, P.G. Kharitonova, E.G. Glukhovskoy. St. Petersburg State Polytechnical Univer. J. Phys. Mathemat., 15 (3.3), 250 (2022). DOI: 10.18721/JPM.153.349
S.V. Stetsyura, E.G. Glukhovskoy, A.V. Kozlowski, I.V. Malyar. Tech. Phys., 60 (5), 746 (2015). DOI: 10.1134/S1063784215050266
A. Mycielski. J. Appl. Phys., 63 (8), 3279 (1988). DOI: 10.1063/1.340813
A.G. Rokakh. Pis'ma v ZhTF, 10 (13), 820 (1984) (in Russian)
S.V. Bulyarskii, V.V. Svetukhin, O.V. Prikhod'ko. Semiconductors, 33 (11), 1157 (1999). DOI: 10.1134/1.1187839
S.V. Stetsyura, I.V. Malyar, A.A. Serdobintsev, S.A. Klimova. Semiconductors, 43 (8), 1064 (2009). DOI: 10.1134/S1063782609080193
S.G. Yudin, V.V. Bodnarchuk, V.V. Lazarev, A.I. Smirnova, S.V. Yablonskii. Liquid Crystals and their Application, 19 (4), 50 (2019). DOI: 10.18083/LCAppl.2019.4.50
A.G. Rokakh, S.V. Stetsyura. Inorganic Mater., 33 (2), 153 (1997)
M.K. Sheinkman, N.E. Korsunskaya. Fotokhimicheskiye reaktsii v poluprovodnikakh tipa A2B6. V kn. Fizika soyedineniy A2B6, ed. by A.N. Georgobiani, M.K. Sheinkman (Nauka, M., 1986)

Publisher:

Institute Officers:

Contact us: