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Memristor nanostructures based on the bigraphene/diamane phase transition
Russian version
G.N. Panin 1, E.V. Emelin 1, O.O. Kapitanova 2,3, V.I. Korepanov 1, L.A. Varlamova 4, D.O. Klimchuk 4, S.V. Erokhin 4, K.V. Larionov 4, P.B. Sorokin 1,4
1Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblast, Russia
2Department of Chemistry, Lomonosov Moscow State University, Moscow, Russia
3Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, Moscow, Russia
4Laboratory of Digital Materials Science, National University of Science and Technology MISIS, Moscow, Russia
Email: panin@iptm.ru
PDF
Carbon nanostructures based on a local structural phase transition bigraphene/diamane obtained by transferring two graphene layers onto a La3Ga5SiO14 substrate and irradiating them with an electron beam through a polymethyl methacrylate layer are studied. Irradiation of the structure led to local functionalization of bigraphene with oxygen and hydrogen with the formation of sp3- bonds and a bigraphene-diamane phase transition, which was previously predicted theoretically. Changes in the intensity and position of peaks in the Raman spectra of irradiated bigraphene and an increase in its resistance indicate a local phase transition. Theoretical calculations of the modified bigraphene structure on La3Ga5SiO14 and experimental measurements of the proportion of sp3-hybridized carbon atoms indicate the formation of diamane nanoclusters and the possibility of local formation of nanostructures whose memristive states can be controlled at low currents and bias voltages. Keywords: graphene, diamond monolayer, memristor, electron beam nanotechnology, low-dimensional crystals.
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