Boiko M. E.
1, Sharkov M. D.
1, Boiko A. M.1, Butenko P. N.1, Almaev A. V.2, Nikolaev V. I.1
1Ioffe Institute, St. Petersburg, Russia
2Tomsk State University, Tomsk, Russia
Email: boikomix@gmail.com, mischar@mail.ru, andray599@gmail.com, pavel.butenko@mail.ioffe.ru, almaev_alex@mail.ru, nkvlad@inbox.ru
In a film SnO2/Ga2O3/GaN/Al2O3 grown via vapor-phase epitaxial techniques a study of domains formation has been performed with the help of X-ray diffraction. The estimations of domain sizes in the film normal direction within film layers and the substrate have been obtained. Reduction of crystal perfectness in layers along their remoteness from the substrate has been stated. The hypothesis of amorphous or nanosized structure of the upside tin dioxide layer has been formulated Keywords: Semiconductor Heterostructures, Multilayer Films, X-Ray Diffraction, Domain Structure, Crystal Perfectness.
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Дата начала обработки статистических данных - 27 января 2016 г.